OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

QSD733C

P1-P3P4-P4
0.190 (4.83)
0.178 (4.52)
0.235 (5.97)
0.218 (5.54)
0.030 (0.76)
COLLECTOR
45°
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.050 (1.27)
0.215 (5.46) NOM
0.020 (0.51)
SQ 2PLCS
45°
0.020 (0.51) RADIUS
EMITTER
0.100 (2.54) NOM
PLASTIC SILICON
INFRARED PHOTODARLINGTON
PACKAGE DIMENSIONS
FEATURES
• NPN Silicon Photodarlington
• Package Type: Plastic TO-18
• Matched Emitter: QED523
• Narrow Reception Angle, 40°
• Daylight Filter
• Package material and color: black epoxy
• High Sensitivity
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
3. Orange stripe on the flange.
EMITTER
COLLECTOR
SCHEMATIC
QSD733
DESCRIPTION
The QSD733 is a silicon phototdarlington encapsulated in an infrared transparent, black TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300364 7/16/01 1 OF 4 www.fairchildsemi.com
PLASTIC SILICON
INFRARED PHOTODARLINGTON
QSD733
www.fairchildsemi.com 2 OF 4 7/16/01 DS300364
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Collector-Emitter Voltage V
CE
30 V
Emitter-Collector Voltage V
EC
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Sensitivity Wavelength !
PS
— 880 — nm
Reception Angle " — ±20 — Deg.
Collector-Emitter Dark Current V
CE
= 10 V, Ee = 0 I
CEO
— — 100 nA
Collector-Emitter Breakdown I
C
= 1 mA BV
CEO
30 — — V
Emitter-Collector Breakdown I
E
= 100 µA BV
ECO
5——V
On-State Collector Current
(5)
Ee = 0.125 mW/cm
2
, V
CE
= 5 V
I
C(ON) 5.0 — — mA
Saturation Voltage
(5)
Ee = 0.125 mW/cm
2
, I
C
= 2.0 mA
V
CE(sat)
— — 1.0 V
Rise Time
V
CC
= 5 V, R
L
= 100 Ω, I
C
= 0.15 mA
t
r
—20—
µs
Fall Time t
f
—50—
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
PLASTIC SILICON
INFRARED PHOTODARLINGTON
QSD733
DS300364 7/16/01 3 OF 4 www.fairchildsemi.com
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Figure 4. Light Current vs. Collector - Emitter Voltage
V
CE
- Collector-Emitter Voltage (V)
0 5 10 15 20 25 30
I
CEO
- Dark Current (nA)
10
-3
10
-2
10
-1
10
0
10
1
E
e
- Radiant Intensity (mW/cm
2
)
0.1 1
I
C(ON)
- Light Current (mA)
10
1
10
2
10
3
V
CE
= 5V
GaAs Light Source
V
CE
- Collector-Emitter Voltage (V)
0.1 1 10
I
L
- Normalized Light Current
10
-3
10
-2
10
-1
10
0
10
1
I
e
=0.15mW/cm
2
I
e
=0.2mW/cm
2
I
e
=0.1mW/cm
2
I
e
=0.125mW/cm
2
Normalized to:
V
CE
= 5V
I
e
= 0.125mW/cm
2
T
A
= 25
o
C
T
A
- Ambient Temperature (
o
C
)
25 50 75 100
I
CEO
- Normalized Dark Current
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
Normalized to:
V
CE
= 25V
T
A
= 25
o
C
V
CE
=25V
V
CE
=10V
P1-P3P4-P4

QSD733C

Mfr. #:
Buy QSD733C
Manufacturer:
ON Semiconductor
Description:
SENSOR PHOTO 880NM TOP VIEW TO18
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet