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BUK7606-55A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7606-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 1 February 201
1
6 of 13
NXP Semiconductors
BUK7606-55A
N-channel T
renchMOS st
andard level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Forwar
d transconductanc
e as a function of
drain current; typi
cal values
03nf29
0
100
200
300
400
02468
1
0
V
DS
(V)
I
D
(A)
4.5
5.5
6.5
8.5
20
14
12
10
9
V
GS
(V) = 7.5
03nf28
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
5
1
01
52
0
V
GS
(V)
R
DSon
(m
Ω
)
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03nf26
0
20
40
60
80
0
2
04
06
08
0
1
0
0
I
D
(A)
g
fs
(S)
BUK7606-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 1 February 201
1
7 of 13
NXP Semiconductors
BUK7606-55A
N-channel T
renchMOS st
andard level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11.
Gate-source
threshold
voltage as a function
of
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03nf27
0
20
40
60
80
100
120
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
0
2
4
6
8
10
0
40
80
120
Q
G
(nC)
V
GS
(V)
V
DS
= 14 V
V
DS
= 44 V
03nf25
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nf30
0
4
8
12
0
40
80
120
I
D
(A)
R
DSon
(m
Ω
)
6
6.5
7
8
10
V
GS
(V) = 5.5
BUK7606-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 1 February 201
1
8 of 13
NXP Semiconductors
BUK7606-55A
N-channel T
renchMOS st
andard level FET
Fig 13.
Normalized drain-source on-state resistance
factor as a
function of junction
temperature
Fig 14.
Input and reverse tr
ansfer capacitances as a
function of drain
-source voltage; typical val
ues
Fig 15.
Reverse diode curren
t as a function of revers
e diode voltage; typical valu
es
03ne89
0
0.
5
1
1.
5
2
-
60
0
60
120
180
T
j
(
°
C)
a
03nf31
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10
−
2
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nf24
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
V
SD
(V)
I
S
(A)
T
j
= 175
°
C
T
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7606-55A,118
Mfr. #:
Buy BUK7606-55A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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