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IS62WV25616BLL-55TLI

P1-P3P4-P6P7-P9P10-P12P13-P14
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. F
08/25/2014
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
IS62WV25616ALL
IS62WV25616BLL
256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
• High-speedaccesstime:55ns,70ns
• CMOSlowpoweroperation
36 mW (typical) operating
9µW(typical)CMOSstandby
• TTLcompatibleinterfacelevels
• Singlepowersupply
1.65V--2.2V V
dd (IS62WV25616ALL)
2.5V--3.6V V
dd (IS62WV25616BLL)
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• Datacontrolforupperandlowerbytes
• Industrialtemperatureavailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS62WV25616ALL/IS62WV25616BLLarehigh-
speed,lowpower,4MbitSRAMsorganizedas256Kwords
by 16 bits. It is fabricated using ISSI's high-performance
CMOStechnology.Thishighlyreliableprocesscoupledwith
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CS1isHIGH(deselected)orwhen CS1 is LOW and
both LB and UBareHIGH,thedeviceassumesastandby
mode at which the power dissipation can be reduced down
withCMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs.TheactiveLOWWriteEnable(WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB)andLowerByte(LB) access.
TheIS62WV25616ALL/IS62WV25616BLLarepackaged
intheJEDECstandard44-PinTSOP(TYPEII) and 48-pin
miniBGA(6mmx8mm).
FUNCTIONAL BLOCK DIAGRAM
AUGUST 2014
A0-A17
CS1
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
08/25/2014
IS62WV25616ALL, IS62WV25616BLL
PIN DESCRIPTIONS
A0-A17 AddressInputs
I/O0-I/O15 DataInputs/Outputs
CS1, CS2 Chip Enable Input
OE OutputEnableInput
WE Write Enable Input
LB Lower-byteControl(I/O0-I/O7)
UB Upper-byteControl(I/O8-I/O15)
NC No Connection
Vdd Power
GND Ground
44-Pin mini TSOP (Type II)
(Package Code T)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17
PIN CONFIGURATIONS
48- ball mini BGA (6mm x 8mm)
(Package Code B)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
NC
I/O
8
UB A3
A4
CSI I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
A17
A7
I/O
3
VDD
VDD
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11 NC
44-Pin mini TSOP (Type II)
2 Chip Enable Option
(Package Code T2)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
CS2
A8
A9
A10
A11
A17
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3
Rev. F
08/25/2014
IS62WV25616ALL, IS62WV25616BLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Symbol Parameter Test Conditions Vdd Min. Max. Unit
Voh OutputHIGHVoltage Ioh = -0.1 mA 1.65-2.2V 1.4 — V
Ioh = -1 mA 2.5-3.6V 2.2 — V
Vol OutputLOWVoltage Iol = 0.1 mA 1.65-2.2V — 0.2 V
Iol = 2.1 mA 2.5-3.6V — 0.4 V
VIh InputHIGHVoltage 1.65-2.2V 1.4 Vdd + 0.2 V
2.5-3.6V 2.2 Vdd + 0.3 V
VIl
(1)
InputLOWVoltage
1.65-2.2V –0.2 0.4 V
2.5-3.6V –0.2 0.8 V
IlI InputLeakage GND≤ VIn ≤ Vdd
–1 1 µA
Ilo OutputLeakage
GND≤ Vout ≤ Vdd, OutputsDisabled –1 1 µA
Notes: 1. VIl (min.) = –1.0V for pulse width less than 10 ns.
OPERATING RANGE (Vdd)
Range Ambient Temperature IS62WV25616ALL IS62WV25616BLL
Commercial 0°Cto+70°C 1.65V-2.2V 2.5V-3.6V
Industrial –40°C to +85°C 1.65V - 2.2V 2.5V-3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.2toVdd+0.3 V
Vdd VddRelatedtoGND –0.2toVdd+0.3 V
tstg StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the op-
erational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
TRUTH TABLE
I/O PIN
Mode WE CS1 OE LB UB I/O0-I/O7 I/O8-I/O15 Vdd Current
NotSelected X H X X X High-Z High-Z Isb1, Isb2
X X X H H High-Z High-Z Isb1, Isb2
OutputDisabled H L H L X High-Z High-Z Icc
H L H X L High-Z High-Z Icc
Read H L L L H dout High-Z Icc
H L L H L High-Z dout
h l l l l dout dout
Write L L X L H dIn High-Z Icc
L L X H L High-Z dIn
l l X l l dIn dIn
P1-P3P4-P6P7-P9P10-P12P13-P14

IS62WV25616BLL-55TLI

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Manufacturer:
ISSI
Description:
SRAM 4Mb 256Kx16 55ns Async SRAM
Lifecycle:
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