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IRLR7811WCPBF

P1-P3P4-P6P7-P9P10-P10
www.irf.com 1
05/24/06
IRLR7811WCPbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 64
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 45 A
I
DM
Pulsed Drain Current 260
P
D
@T
C
= 25°C Power Dissipation 71
P
D
@T
A
= 100°C Power Dissipation* 1.5 W
Linear Derating Factor 0.48 W/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes through are on page 9
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.1
R
θJA
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
V
DSS
R
DS(on)
max Q
g
30V 10.5mΩ 19nC
D-Pak
IRLR7811WCPbF
PD - 96064
IRLR7811WCPbF
2 www.irf.com
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 140 mJ
I
AR
Avalanche Current ––– 12 A
E
AR
Repetitive Avalanche Energy ––– 7.1 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 12A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 30 45 ns T
J
= 25°C, I
F
=12A
Q
rr
Reverse RecoveryCharge ––– 27 41 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
64
260
A
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
ns
mΩR
DS(on)
Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 27 ––– mV/°C Reference to 25°C, I
D
= 1mA
––– 5.8 10.5 V
GS
= 10V, I
D
= 15A
––– 7.0 15 V
GS
= 4.5V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage ––– 1.5 2.5 V V
DS
= V
GS
, I
D
= 250µA
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -5.0 ––– mV/°C
––– ––– 30
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 150 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -12V
g
fs
Forward Transconductance 58 ––– ––– S V
DS
= 15V, I
D
= 12A
Q
g
Total Gate Charge Control Fet ––– 21 31 nC
Q
gs1
Pre-Vth Gate-Source Charge ––– 5.0 ––– V
DS
= 20V
Q
gs2
Post-Vth Gate-Source Charge ––– 1.7 ––– V
GS
= 4.5V
Q
gd
Gate-to-Drain Charge ––– 6.6 ––– nC I
D
= 12A
Q
godr
Gate Charge Overdrive ––– 5.5 –––
Q
sw
Switch Charge (Q
gs2
+
Q
gd
) ––– 8.3 –––
Q
g
Total Gate Charge Sync Fet ––– 17
Q
oss
Output Charge ––– 10 ––– V
DS
= 16V, V
GS
= 0V
R
g
Gate Resistance ––– 1.6 –––
t
d(on)
Turn-On Delay Time ––– 18 ––– V
DD
= 16V, V
GS
= 4.5V
t
r
Rise Time ––– 4.8 ––– I
D
= 12A
t
d(off)
Turn-Off Delay Time ––– 11 ––– Clamped Inductive Load
t
f
Fall Time ––– 23 –––
C
iss
Input Capacitance ––– 2260 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 420 ––– pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz
IRLR7811WCPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
2.0 3.0 4.0 5.0 6.0 7.0
V
GS
, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
64A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
P1-P3P4-P6P7-P9P10-P10

IRLR7811WCPBF

Mfr. #:
Buy IRLR7811WCPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 64A DPAK
Lifecycle:
New from this manufacturer.
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