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DTB743ZMT2L

P1-P3P4-P6P7-P7
DTB743ZE
Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
DTB743Z series
PNP -200mA -30V Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
l
Inner circuit
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary NPN Types :DTD743Z series
6) Lead Free/RoHS Compliant.
l
Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l
Packaging specifications
8
3,000
Y13
DTB743ZE
EMT3
1616
TL
180
Value
VMT3
EMT3
-30V
-200mA
4.7kW
47kW
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
DTB743ZM
VMT3
1212
T2L
180
8
8,000
Y13
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
DTB743ZM
(SC-105AA)
DTB743ZE
SOT-416 (SC-75A)
OUT
IN
GND
OUT
IN
GND
1/6
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTB743Z series
lAbsolute maximum ratings (Ta = 25°C)
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Parameter
Symbol
Values
Unit
V
CC
-30
V
V
IN
-20 to +5
V
I
C(MAX.)
*1
-200
mA
P
D
*2
150
mW
T
j
150
°C
T
stg
-55 to +150
°C
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input voltage
V
I(off)
V
CC
= -5V, I
O
= -100mA
-
-
V
V
I(on)
V
O
= -0.3V, I
O
= -20mA
-1.2
-
-
-0.3
V
Input current
I
I
V
I
= -5V
-
-
-1.4
mA
Output voltage
V
O(on)
I
O
/ I
I
= -50mA / -2.5mA
-
-0.07
-0.3
mA
DC current gain
G
I
V
O
= -2V, I
O
= -100mA
140
-
-
-
Output current
I
O(off)
V
CC
= -30V, V
I
= 0V
-
-
-0.5
kW
Resistance ratio
R
2
/R
1
-
8
10
12
-
Input resistance
R
1
-
3.29
4.7
6.11
MHz
Transition frequency
f
T
*1
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
-
260
-
2/6
2012.07 - Rev.B
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTB743Z series
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : I
O
[mA]
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
[mA]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : V
O
[V]
Fig.4 DC current gain vs. output current
DC CURRENT GAIN : G
I
OUTPUT CURRENT : I
O
[mA]
0
-50
-100
-150
-200
0 -5 -10
0A
-0.1mA
-0.2mA
-0.3mA
-0.4mA
-0.5mA
-0.6mA -0.7mA
-0.8mA
-0.9mA
-1.0mA
I
I
=
Ta=25ºC
3/6
2012.07 - Rev.B
P1-P3P4-P6P7-P7

DTB743ZMT2L

Mfr. #:
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Description:
Bipolar Transistors - Pre-Biased TRANSISTOR
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