AOD464
Symbol Min Typ Max Units
BV
DSS
105 V
1
T
J
=55°C
5
I
GSS
100 nA
V
GS(th)
2.5 3.2 4 V
I
D(ON)
80 A
21.5 28
T
J
=125°C
32 40
24 31
m
g
FS
50 S
V
SD
0.73 1 V
I
S
55 A
C
iss
2038 2445 pF
C
oss
204 pF
C
rss
85 pF
R
g
1.3 1.56 Ω
Q
g
(10V)
38.5 46 nC
Q
gs
8nC
Q
gd
10 nC
t
D(on)
12.7 ns
t
r
8.2 ns
t
D(off)
31.5 ns
t
f
11.2 ns
t
rr
59.6
74 ns
Q
rr
161 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=100A/µs
Turn-On DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.7Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance V
DS
=5V, I
D
=20A
Diode Forward Voltage I
S
=1A, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
mΩ
V
GS
=6V, I
D
=20A
Gate Threshold Voltage V
DS
=V
GS
,
I
D
=250µA
On state drain current V
GS
=10V, V
DS
=5V
µA
Gate-Body leakage current V
DS
=0V, V
GS
=±25V
Drain-Source Breakdown Voltage I
D
=10mA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=84V, V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev1: Sep. 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
