NTSJ20U100CTG

© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 5
1 Publication Order Number:
NTST20U100CT/D
NTST20U100CT,
NTSB20U100CT-1G,
NTSJ20U100CTG,
NTSB20U100CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.50 V at I
F
= 5 A
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
PbFree and HalideFree Packages are Available
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
3
2, 4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
TO220AB
CASE 221A
STYLE 6
3
4
1
2
3
4
1
2
I2PAK
CASE 418D
STYLE 3
TO220FP
CASE 221AH
3
4
1
2
D2PAK
CASE 418B
NTST20U100CT, NTSB20U100CT1G, NTSJ20U100CTG, NTSB20U100CTG
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 130°C) Per device
Per diode
I
F(AV)
20
10
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 125°C) Per device
Per diode
I
FRM
40
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150 A
Operating Junction Temperature T
J
40 to +150 °C
Storage Temperature T
stg
40 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol
NTST20U100CTG,
NTSB20U100CT1G
NTSB20U100CTG NTSJ20U100CTG Unit
Maximum Thermal Resistance per Diode
JunctiontoCase
JunctiontoAmbient
R
q
JC
R
q
JA
2.5
70
1.24
46.7
4.20
105
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
v
F
0.55
0.65
0.50
0.58
0.79
0.68
V
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 70 V, T
J
= 25°C)
(V
R
= 70 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
17
5.3
12
800
25
mA
mA
mA
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
NTST20U100CT, NTSB20U100CT1G, NTSJ20U100CTG, NTSB20U100CTG
http://onsemi.com
3
TYPICAL CHARACTERISITICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
Figure 3. Typical Junction Capacitance
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
100
1.0
0.1
20
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
0.001
i
F
, INSTANTANEOUS FORWARD CURRENT (A, INSTANTANEOUS FORWARD CURRENT (A)
I
0.6 0.8 1.0
40 60
0 0.2 0.4
80
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
0.01
0.1
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
1.0
10
100
, INSTANTANEOUS REVERSE CURRENT (mA)
R
1.2
100
0.1
V
R
, REVERSE VOLTAGE (V)
10000
1000
10
110
100
T
J
= 25°C
10
30 50 70 90
C
J
, JUNCTION CAPACITANCE (pF)
Figure 4. Current Derating per Leg
0
5
20
0 20 40 60 80 100 120 140
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
R
q
JC
= 1.3°C/W
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
0
2
4
6
8
10
12
0 4 20 24
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
SQUARE
WAVE
dc
T
J
= 150°C
I
PK
/I
AV
= 5
I
PK
/I
AV
= 10
I
PK
/I
AV
= 20
81216
1.4 1.6 1.8
100
0
5
10
15
20
25
30
0 20 40 60 80 100 120 140
SQUARE WAVE
dc
R
q
JC
= 1.3°C/W
35
40
14
16
18
20
10
15

NTSJ20U100CTG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers LVFR DUAL 20A100V TO220FP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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