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VS-20MT120UFP

P1-P3P4-P6P7-P9P10-P11
VS-20MT120UFP
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
7
Document Number: 94505
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - Typical Diode I
rr
vs. dI
F
/dt
V
CC
= 400 V; V
GE
= 15 V; I
CE
= 5.0 A; T
J
= 150 °C
Fig. 20 - Typical Diode Q
rr
vs. dI
F
/dt
V
CC
= 400 V; V
GE
= 15 V; T
J
= 150 °C
Fig. 21 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Fig. 22 - Typical Gate Charge vs. V
GE
I
CE
= 5.0 A; L = 600 μH
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0 200 400 600 800 1000
di
F
/dt (A/μs)
10
15
20
25
30
35
40
I
RR
)
A(
0 200 400 600 800 1000 1200
di
F
/dt (A/μs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q
RR
)Cμ(
5.0
Ω
30
Ω
10
Ω
50
Ω
30A
20A
10A
0 20 40 60 80 100
V
CE
(V )
10
100
1000
10000
)Fp( ecnaticapaC
Cies
Coes
Cres
0 40 80 120 160 200
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
EG
)
V
(
600V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Z ( esnopseR lamrehT
CJht
)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONS E )
Notes:
1. Duty Factor D = t1/t2
2. P eak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.161 0.000759
0.210 0.017991
0.147 0.06094
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci=
i
/
Ri
Ci= τi/Ri
VS-20MT120UFP
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
8
Document Number: 94505
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
Fig. 25 - Gate Charge Circuit (Turn-Off)
Fig. 26 - RBSOA Circuit
Fig. 27 - S.C. SOA Circuit
Fig. 28 - Switching Loss Circuit
1E-006 1E-005 0.0001 0.001 0. 01 0.1 1 10
t
1
, Rectangul ar Pul s e Duration (s ec)
0.0001
0.001
0.01
0.1
1
Z ( esno
pseR lamrehT
CJht
)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERM AL RE SPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.238 0.001017
0.312 0.033081
0.061 0.77744
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci=
i
/
Ri
Ci= τi/Ri
1 K
V
CC
D.U.T.
0
L
+
-
L
R
g
80 V
D.U.T
1000 V
+
-
D
C
Driver
D.U.T.
900 V
+
-
L
R
g
V
CC
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
-
+
+
-
VS-20MT120UFP
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
9
Document Number: 94505
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 29 - Electrical diagram
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
9, 10
4
3
5
6
15, 16
7
8
11, 12
13, 14
2
1
1
2
3
4
5
6
7
- P = Lead (Pb)-free
- Current rating (20 = 20 A)
- Essential part number
- Voltage code (120= 1200 V)
- Speed/type (U = Ultrafast IGBT)
- Circuit configuration (F = Full bridge)
Device code
51 32 4 6 7
20 MT 120 U F P
- Vishay Semiconductors product
VS-
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95245
P1-P3P4-P6P7-P9P10-P11

VS-20MT120UFP

Mfr. #:
Buy VS-20MT120UFP
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 1200 Volt 40 Amp Full Bridge
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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