© 2006 IXYS CORPORATION All rights reserved
IXTH230N085T
IXTQ230N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
26
28
30
32
34
36
38
40
42
44
46
48
50
52
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 42.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
220
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
80
85
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 42.5V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
34
36
38
40
42
44
46
48
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 42.5V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times v s. Drain Current
38
38.5
39
39.5
40
40.5
41
41.5
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 42.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
26
28
30
32
34
36
38
40
42
44
46
48
50
52
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 42.5V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
220
240
2468101214161820
R
G
- Ohms
t
f
- Nanoseconds
50
75
100
125
150
175
200
225
250
275
300
325
350
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 42.5V
I
D
= 50A
I
D
= 25A
IXYS REF: T_230N085T (6V) 8-18-06.xls
