TR236

P1-P3 P4-P6 P7-P9

February 2008 Rev 2 1/9

9

TR236

High voltage fast-switching NPN power transistor

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

■ Electronic transformer for halogen lamps

Description

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds. It uses a cellular emitter

structure with planar edge termination to enhance

switching speeds while maintaining a satisfactory

RBSOA.

Figure 1. Internal schematic diagram

TO-220

1

2

3

Table 1. Device summary

Oder code Marking Package Packaging

TR236 TR236 TO-220 Tube

ww w.st.com

Obsolete Product(s) - Obsolete Product(s)

Electrical ratings TR236

2/9

1 Electrical ratings

Table 2. Absolute maximum rating

Symbol Parameter Value Unit

V

CES

Collector-emitter voltage (V

BE

= 0) 700 V

V

CEO

Collector-emitter voltage (I

B

= 0) 400 V

V

EBO

Emitter-base voltage

(I

C

= 0, I

B

= 2 A, t

p

< 10 µs)

V

(BR)EBO

V

I

C

Collector current (I

C

= 0) 4 A

I

CM

Collector peak current (t

P

< 5 ms) 8 A

I

B

Base current 2 A

I

BM

Base peak current (t

P

< 5 ms) 4 A

P

tot

Total dissipation at T

c

≤ 25 °C 70 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Obsolete Product(s) - Obsolete Product(s)

TR236 Electrical characteristics

3/9

2 Electrical characteristics

(T

case

= 25 °C unless otherwise specified)

Table 3. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

Collector cut-off current

(V

BE

= 0 )

V

CE

= 700 V

V

CE

= 700 V T

C

= 125 °C

0.1

0.5

mA

mA

I

CEO

Collector cut-off current

(I

B

= 0 )

V

CE

= 400 V

0.25 mA

V

(BR)EBO

Emitter-base breakdown

voltage (I

C

= 0)

I

E

= 10 mA

918V

V

CEO(sus)

(1)

1. Pulsed duration = 300ms, duty cycle ≤ 1.5%

Collector-emitter

sustaining voltage

(I

B

= 0)

I

C

= 10 mA

400 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 0.8 A __ I

B

= 0.1 A

I

C

= 2.5 A _ I

B

= 0.6 A

1.1

1.3

V

V

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 1 A __ I

B

= 0.2 A

I

C

= 2.5 A __ I

B

= 0.5 A

1.2

1.3

V

V

h

FE

DC current gain

I

C

= 10 mA V

CE

= 5 V

I

C

= 2.5 A V

CE

= 5 V

10

828

t

s

t

f

Inductive load

Storage time

Fall time

V

CC

= 200 V I

C

= 2 A

I

B1

= 0.4 A V

BE(off)

= -5 V

R

BB

= 0 Ω L = 200 µH

(see Figure 2)

0.6

0.1

µs

µs

Obsolete Product(s) - Obsolete Product(s)

P1-P3 P4-P6 P7-P9

TR236

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

TRANS NPN 400V 4A TO-220

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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