MCP1801
DS22051D-page 16 2010 Microchip Technology Inc.
NOTES:
2010 Microchip Technology Inc. DS22051D-page 17
MCP1801
6.0 APPLICATION CIRCUITS AND
ISSUES
6.1 Typical Application
The MCP1801 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1: Typical Application Circuit.
6.1.1 APPLICATION INPUT CONDITIONS
6.2 Power Calculations
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1801 is a
function of input voltage, output voltage, and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(25.0 µA x V
IN
). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating temperature
specified for the MCP1801 is +85°C
. To estimate the
internal junction temperature of the MCP1801, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (R
JA
). The thermal
resistance from junction to ambient for the SOT-23-5
pin package is estimated at 256°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
Package Type = SOT-23-5
Input Voltage Range = 2.4V to 5.0V
V
IN
maximum = 5.0V
V
OUT
typical = 1.8V
I
OUT
= 50 mA maximum
MCP1801
GND
V
OUT
V
IN
C
IN
F
C
OUT
F Ceramic
V
OUT
V
IN
2.4V to 5.0V
1.8V
I
OUT
50 mA
SHDN
Ceramic
NC
P
LDO
V
IN MAX 
V
OUT MIN
I
OUT M AX 
=
Where:
P
LDO
= LDO Pass device internal power
dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
T
JMAX
P
TOTAL
R
JA
T
AMAX
+=
Where:
T
J(MAX)
= Maximum continuous junction
temperature
P
TOTAL
= Total device power dissipation
R
JA
= Thermal resistance from
junction to ambient
T
AMAX
= Maximum ambient temperature
P
DMAX
T
JMAX
T
AMAX

R
JA
---------------------------------------------------
=
Where:
P
D(MAX)
= Maximum device power
dissipation
T
J(MAX)
= Maximum continuous junction
temperature
T
A(MAX)
= Maximum ambient temperature
R
JA
= Thermal resistance from
junction to ambient
T
JRISE
P
DMAX
R
JA
=
Where:
T
J(RISE)
= Rise in device junction
temperature over the ambient
temperature
P
TOTAL
= Maximum device power
dissipation
R
JA
= Thermal resistance from
junction to ambient
MCP1801
DS22051D-page 18 2010 Microchip Technology Inc.
EQUATION 6-5:
6.3 Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1 POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R
JA
) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application”, (DS00792), for more information
regarding this subject.
Package
Package Type: SOT-23-5
Input Voltage
V
IN
= 2.4V to 5.0V
LDO Output Voltages and Currents
V
OUT
= 1.8V
I
OUT
=50mA
Maximum Ambient Temperature
T
A(MAX)
= +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V
IN
to V
OUT
).
P
LDO(MAX)
=(V
IN(MAX)
- V
OUT(MIN)
) x I
OUT(MAX)
P
LDO
= (5.0V - (0.98 x 1.8V)) x 50 mA
P
LDO
= 161.8 milli-Watts
T
J
T
JRISE
T
A
+=
Where:
T
J
= Junction Temperature
T
J(RISE)
= Rise in device junction
temperature over the ambient
temperature
T
A
= Ambient temperature
T
J(RISE)
=P
TOTAL
x Rq
JA
T
JRISE
= 161.8 milli-Watts x 256.0°C/Watt
T
JRISE
=41.42°C

MCP1801T-6002I/OT

Mfr. #:
Manufacturer:
Microchip Technology
Description:
LDO Voltage Regulators Hi PSRR 150 mA LDO Vin 10V maxVout 6.0V
Lifecycle:
New from this manufacturer.
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