SI3434DV-T1-E3 Datasheet SI3434DV-T1-E3, SI3434DV-T1-GE3 | P1-P3

Vishay Siliconix

Si3434DV

Document Number: 71610

S09-0766-Rev. B, 04-May-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 2.5 V Rating for 30 V N-Channel

• Low R

DS(on)

for Footprint Area

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Li-lon Battery Protection

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

30

0.034 at V

GS

= 4.5 V

6.1

0.050 at V

GS

= 2.5 V

5.0

6

4

1

2

3

5

TSOP-6

Top View

2.85 mm

3 mm

Ordering Information: Si3434DV-T1-E3 (Lead (Pb)-free)

Si3434DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

(1, 2, 5, 6) D

(3) G

(4) S

N-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

6.1 4.6

A

T

A

= 70 °C

4.9 3.6

Pulsed Drain Current

I

DM

30

Continuous Source Current (Diode Conduction)

a

I

S

1.7 1.0

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2.0 1.14

W

T

A

= 70 °C

1.3 0.73

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

40 62.5

°C/W

Steady State 90 110

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

25 30

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Document Number: 71610

S09-0766-Rev. B, 04-May-09

Vishay Siliconix

Si3434DV

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 1 mA

0.6 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 24 V, V

GS

= 0 V

1

µA

V

DS

= 24 V, V

GS

= 0 V, T

J

= 70 °C

5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 6.1 A

0.028 0.034

Ω

V

GS

= 2.5 V, I

D

= 2 A

0.042 0.050

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 6.1 A

20 S

Diode Forward Voltage

a

V

SD

I

S

= 1.7 A, V

GS

= 0 V

0.8 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 6.1 A

812

nCGate-Source Charge

Q

gs

1.9

Gate-Drain Charge

Q

gd

2.6

Tur n - O n D e l ay T i m e

t

d(on)

V

DD

= 15 V, R

L

= 15 Ω

I

D

≅ 1 A, V

GEN

= 4.5 V, R

g

= 6 Ω

21 40

ns

Rise Time

t

r

45 90

Turn-Off Delay Time

t

d(off)

40 80

Fall Time

t

f

30 60

Source-Drain Reverse Recovery Time

t

rr

I

F

= 1.7 A, dI/dt = 100 A/µs

40 80

Output Characteristics

0

6

12

18

24

30

012345

V

GS

= 10 V thru 3.5 V

1.5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

2 V

2.5 V

Transfer Characteristics

0

6

12

18

24

30

01234

T

C

= - 55 °C

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 71610

S09-0766-Rev. B, 04-May-09

www.vishay.com

3

Vishay Siliconix

Si3434DV

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.00

0.02

0.04

0.06

0.08

0.10

0 5 10 15 20 25 30

I

D

- Drain Current (A)

V

GS

= 2.5 V

V

GS

= 4.5 V

0

1

2

3

4

5

0246810

V

DS

= 15 V

I

D

= 6.1 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

30

1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

10

T

J

= 150 °C

T

J

= 25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

200

400

600

800

1000

1200

0 5 10 15 20 25 30

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 6.1 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

0.00

0.02

0.04

0.06

0.08

0.10

012345

I

D

= 6.1 A

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

I

D

= 2 A

SI3434DV-T1-E3

SI3434DV-T1-E3

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