Vishay Siliconix
Si3434DV
Document Number: 71610
S09-0766-Rev. B, 04-May-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 2.5 V Rating for 30 V N-Channel
• Low R
DS(on)
for Footprint Area
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Li-lon Battery Protection
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.034 at V
GS
= 4.5 V
6.1
0.050 at V
GS
= 2.5 V
5.0
6
4
1
2
3
5
TSOP-6
Top View
2.85 mm
3 mm
Ordering Information: Si3434DV-T1-E3 (Lead (Pb)-free)
Si3434DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
6.1 4.6
A
T
A
= 70 °C
4.9 3.6
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.7 1.0
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.0 1.14
W
T
A
= 70 °C
1.3 0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
40 62.5
°C/W
Steady State 90 110
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
25 30