VS-P400 Series
www.vishay.com
Vishay Semiconductors
Revision: 27-Mar-14
5
Document Number: 93755
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001
93755_09
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
(1) (2) (3) (4)
(1) P
GM
= 10 W, t
p
= 5 ms
(2) P
GM
= 20 W, t
p
= 25 ms
(3) P
GM
= 50 W, t
p
= 1 ms
(4) P
GM
= 100 W, t
p
= 500 μs
Frequency limited by P
G(AV)
(b)
(a)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 40 °C
V
GD
I
GD
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 10 V, 20 Ω, t
r
≤ 1 μs
(b) Recommended load line for
rated dI/dt: 10 V, 65 Ω, t
r
≤ 1 μs
1 - Vishay Semiconductors product
2 - Module type
6 - K = Optional Voltage Suppression
7 - W = Optional Freewheeling Diode
4
- Circuit configuration
- Voltage code
1 = 400 V
2 = 600 V
3 = 800 V
4 = 1000 V
5 = 1200 V
5
- Current rating
1 = 25 A DC (P100 Series)
4 = 40 A DC (P400 Series)
0 = Single Phase, Hybrid Bridge Common Cathode
2 = Single Phase, Hybrid Bridge Doubler Connection
3 = Single Phase, all SCR Bridge
3
Device code
1 32 4 5 6 7
VS- 4P02KW
