Product Standards
MOS FET
FM6L52020L
FET (N-ch.)
SBD
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for diodes.
Page
5
8
80 105
18
VDS = 10 V, VGS = 0, f = 1 MHz
Forward transfer admittance
*1
280
17
Rise time
*2
Crss
of 6
VDSS ID = 1.0 mA, VGS = 0
20 V
IDSS
td(on)
2
Drain-source cutoff current
Gate-source cutoff current IGSS
±10
Turn-on delay time
*2
|Yfs|
Electrical Characteristics Ta = 25C 3
C
Short-circuit input capacitance (Common source)
Ciss
VGS = ±8 V, VDS = 0
Gate threshold voltage
ID = 1.0 A, VGS = 4.0 V
Parameter
Drain-source surrender voltage
Symbol Conditions Min
0.850.4
VTH ID = 1.0 mA, VDS = 10 V
VDS = 20 V, VGS = 0
Max UnitTyp
1.0 μA
ID = 0.5 A, VGS = 2.5 V
Drain-source ON resistance
*1
2.
Turn-off delay time
*2
td(off)
Note) 1.
Fall time
*2
μA
V1.3
ns
pF
Reverse transfer capacitance (Common source)
Short-circuit output capacitance (Common source)
Coss
m
3.0 S
150100
RDS(on)1
VDD = 10 V, VGS = 0 to 4.0 V
tr
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse measurement
20
ID = 1.0 A
ns
ID = 1.0 A
VDD = 6 V, VGS = 4.0 to 0 V
Conditions Min
Forward voltage VF IF = 800 mA
Typ Max Unit
0.47 V
80 μA
RDS(on)
Reverse current IR
Parameter Symbol
tf
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
18
ID = 1.0 A, VDS = 10 V, f = 1 kHz
VR = 20 V
