IL2 Datasheet IL2-X009, IL2-X009T, IL5 | P1-P3

Optocoupler, Phototransistor Output, with Base Connection

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83612

294 Rev. 1.6, 10-Dec-08

IL1, IL2, IL5

Vishay Semiconductors

DESCRIPTION

The IL1, IL2, IL5 are optically coupled isolated pairs

employing GaAs infrared LEDs and silicon NPN

phototransistor. Signal information, including a DC level, can

be transmitted by the drive while maintaining a high degree

of electrical isolation between input and output. The IL1, IL2,

IL5 are especially designed for driving medium-speed logic

and can be used to eliminate troublesome ground loop and

noise problems. These couplers can be used also to replace

relays and transformers in many digital interface applications

such as CRT modulation.

FEATURES

• Current transfer ratio (see order information)

• Isolation test voltage 5300 V

RMS

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

AGENCY APPROVALS

• UL1577, file no. E52744 system code H or J, double

protection

• DIN EN 60747-5-5 (VDE 0884) available with option 1

• BSI IEC 60950; IEC 60065

Note

For additional information on the available options refer to option information.

i179004

ORDER INFORMATION

PART REMARKS

IL1 CTR > 20 %, DIP-6

IL2 CTR > 100 %, DIP-6

IL5 CTR > 50 %, DIP-6

IL1-X006 CTR > 20 %, DIP-6 400 mil (option 6)

IL2-X006 CTR > 100 %, DIP-6 400 mil (option 6)

IL2-X009 CTR >100 %, SMD-6 (option 9)

IL5-X009 CTR > 50 %, SMD-6 (option 9)

ABSOLUTE MAXIMUM RATINGS

(1)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

INPUT

Reverse voltage V

Forward current I

60 mA

Surge current I

FSM

2.5 A

Power dissipation P

diss

100 mW

Derate linearly from 25 °C 1.33 mW/°C

OUTPUT

Collector emitter breakdown voltage

IL1 BV

CEO

50 V

IL2 BV

CEO

70 V

IL5 BV

CEO

70 V

Emitter base breakdown voltage BV

EBO

Collector base breakdown voltage BV

CBO

70 V

Collector current

50 mA

t < 1.0 ms I

400 mA

Power dissipation P

diss

200 mW

Derate linearly from 25 °C 2.6 mW/°C

Document Number: 83612 For technical questions, contact: optocoupler.answers@vishay.com

www.vishay.com

Rev. 1.6, 10-Dec-08 295

IL1, IL2, IL5

Optocoupler, Phototransistor

Output, with Base Connection

Vishay Semiconductors

Notes

(1)

amb

= 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2)

Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

amb

= 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

COUPLER

Package power dissipation P

tot

250 mW

Derate linearly from 25 °C 3.3 mW/°C

Isolation test voltage

between emitter and detector

ISO

5300 V

RMS

Creepage distance ≥ 7mm

Clearance distance ≥ 7mm

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

CTI 175

Isolation resistance

= 500 V, T

amb

= 25 °C R

≥ 10

= 500 V, T

amb

= 100 °C R

≥ 10

Storage temperature T

stg

- 40 to + 150 °C

Operating temperature T

amb

- 40 to + 100 °C

Junction temperature T

100 °C

Soldering temperature

(2)

2.0 mm from case bottom T

sld

260 °C

ABSOLUTE MAXIMUM RATINGS

(1)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

ELECTRICAL CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage I

= 60 mA V

1.25 1.65 V

Breakdown voltage I

= 10 µA V

630 V

Reverse current V

= 6.0 V I

0.01 10 µA

Capacitance V

= 0 V, f = 1.0 MHz C

40 pF

Thermal resistance junction to lead R

thjl

750 K/W

OUTPUT

Collector emitter capacitance V

= 5.0 V, f = 1.0 MHz C

6.8 pF

Collector base capacitance V

= 5.0 V, f = 1.0 MHz C

8.5 pF

Emitter base capacitance V

= 5.0 V, f = 1.0 MHz C

11 pF

Collector emitter leakage voltage V

= 10 V I

CEO

550nA

Collector emitter saturation voltage I

= 1.0 mA, I

= 20 µA V

CEsat

0.25 V

Base emitter voltage V

= 10 V, I

= 20 µA V

0.65 V

DC forward current gain V

= 10 V, I

= 20 µA h

200 650 1800

DC forward current gain saturated V

= 0.4 V, I

= 20 µA h

FEsat

120 400 600

Thermal resistance junction to lead R

thjl

500 K/W

COUPLER

Capacitance (input to output) V

I-O

= 0 V, f = 1.0 MHz C

0.6 pF

Insulation resistance V

I-O

= 500 V R

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83612

296 Rev. 1.6, 10-Dec-08

IL1, IL2, IL5

Vishay Semiconductors

Optocoupler, Phototransistor

Output, with Base Connection

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Current transfer ratio

(collector emitter saturated)

= 10 mA, V

= 0.4 V

IL1 CTR

CEsat

75 %

IL2 CTR

CEsat

170 %

IL5 CTR

CEsat

100 %

Current transfer ratio

(collector emitter)

= 10 mA, V

= 10 V

IL1 CTR

20 80 300 %

IL2 CTR

100 200 500 %

IL5 CTR

50 130 400 %

Current transfer ratio

(collector base)

= 10 mA, V

= 9.3 V

IL1 CTR

0.25 %

IL2 CTR

0.25 %

IL5 CTR

0.25 %

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

NON-SATURATED

Current time

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

mAIL2 4

IL5 10

Delay time

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

0.8

µsIL2 1.7

IL5 1.7

Rise time

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

1.9

µsIL2 2.6

IL5 2.6

Storage time

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

0.2

µsIL2 0.4

IL5 0.4

Fall time

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

1.4

µsIL2 2.2

IL5 2.2

Propagation H to L

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

PHL

0.7

µsIL2 1.2

IL5 1.1

Propagation L to H

= 5 V, R

= 75 Ω,

measured at 50 % of output

IL1

PLH

1.4

µsIL2 2.3

IL5 2.5

SATURATED

Current time

= 0.4 V, R

= 1.0 kΩ,

= 5 V, V

= 1.5 V

IL1

mAIL2 5

IL5 10

Delay time

= 0.4 V, R

= 1.0 kΩ,

= 5 V, V

= 1.5 V

IL1

0.8

µsIL2 1

IL5 1.7

Rise time

= 0.4 V, R

= 1.0 kΩ,

= 5 V, V

= 1.5 V

IL1

1.2

µsIL2 2

IL5 7

Storage time

= 0.4 V, R

= 1.0 kΩ,

= 5 V, V

= 1.5 V

IL1

7.4

µsIL2 5.4

IL5 4.6

P1-P3 P4-P6 P7-P9

IL2

Mfr. #:

Buy IL2

Manufacturer:

Description:

OPTOISO 5.3KV TRANS W/BASE 6DIP

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IL2

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