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PDB-C160SM
P1-P3
Photodiod
e in Plastic Surfac
e Mount Packag
e
PDB-C160S
M
WWW.LUNA
INC.COM
Precision
–
Control
–
Results
Information
in
this
technical
datasheet
is
believed
to
be
correct
and
r
eliable.
Ho
wever,
no
responsi
bility
is
assumed
for
possible
inaccuracies
or
omission.
Specifications are su
bject to chan
ge without notice.
P
age
1/3
REV 04-
20
-
17
©
2016
Lu
na Optoelectronics
. All rights
reserved.
Luna Optoelectro
nics,
1240 Avenida
Acaso, Camarillo
CA 93012 • P
hone (805) 98
7
-
0146 • Fax (805)
484
-
9935
DESCR
IPTION
FEATUR
ES
The
PDB-
C160SM
is a red enhanced PI
N silicon pho
todiode idea
l for high
speed
photoconductive
appl
ications
packaged
in
a
surface
m
ount
package.
Surface Mount
Photoconductive
High Speed
Low cost
RELIA
BILITY
A
PPLICATIONS
Contact
Luna
for
rec
omm
endations
on
spec
ific
test
conditions
and
procedures.
Photointerrupters
Industrial Electronics
IR Remote Contr
ol
Control & Drive
Circuits
A
BSOLUTE MAXIMUM RA
TINGS
SYMBO
L
MIN
M
A
X
UNITS
Reverse Voltage
-
-
32
V
T
a
= 25
°C
UNLESS OTHERW
ISE NOTED
Storage Tem
perature
-
40
-
+100
°C
-
Operating Tem
perature
-
40
to
+100
°C
-
Soldering Tem
perature*
-
-
+260
°C
-
* 1/16 inch fro
m case for 3 se
conds max
.
Photodiod
e in Plastic Surfac
e Mount Packag
e
PDB-C160S
M
WWW.LUNA
INC.COM
Precision
–
Control
–
Results
Information
in
this
t
echnical
datasheet
is
believed
to
be
correct
and
r
eliable.
Ho
wever,
no
responsi
bility
is
assumed
for
possible
inaccuracies
or
omission.
Specifications are su
bject to chan
ge without notice.
P
age
2/3
REV 04-
20
-
17
©
2016
Lu
na Optoelectronics
. All rights
reserved.
Luna Optoelectro
nics,
1240 Avenida
Acaso, Camarillo
CA 93012 • P
hone (805) 98
7
-
0146 • Fax (805)
484
-
9935
OPTO-ELECT
RICAL PA
RAMETERS
T
a
= 25
°C
UNLESS NOTED OTHERWISE
PARAMETER
TEST CONDITIO
NS
MIN
TYP
MAX
UNITS
Short Circuit Current
H= 100 fc, 2856 K
-
80
95
µA
Dark Current
V
R
= 10 V
-
2
30
nA
Shunt Resistance
V
R
= 10 m
V
-
250
-
MW
Junction Capacitance
V
R
=0V; f = 1 MH
z
-
72
-
pF
Spectral Application Ra
nge
Spot Scan
400
-
1100
nm
Peak W
ave Length
= 850nm
-
.62
-
A/
W
Noise Equivalent P
ower
V
R
=10V@
= Peak
-
4.1
x10
-14
-
W
/ √
Hz
Response Tim
e**
RL = 50
Ω,
V
R
= 5V,
= 850
nm,
-
20
-
nS
**Response ti
me of 10% to 90% i
s specified at
85
0nm wavelength lig
ht.
SOLDERING
RECOMMENDAT
ION
W
ave
Not Advised
IR Oven Reflow
Recomm
ended
See reflow profile.
Forced Convection Ref
low
Recomm
ended
See reflow profile.
Convection Reflo
w
Recomm
ended
See reflow profi
le.
Vapor Phase Ref
low
Recomm
ended
See reflow profile.
Manual
Allowed
260
°C
for 3 seconds m
ax.
Moisture Sensiti
vity Level
4
J-STD-
033
TYPICA
L PERFORMA
NCE
SPECTRA
L RESPONSE
SOLDER PA
D LAYOUT
1.45
1.00
1.45
1.80
5.90
SOLDER PAD LAYOUT, mm
A
C
Photodiod
e in Plastic Surfac
e Mount Packag
e
PDB-C160S
M
WWW.LUNA
INC.COM
Precision
–
Control
–
Results
Information
in
this
t
echnical
datasheet
is
believed
to
be
correct
and
r
eliable.
Ho
wever,
no
responsi
bility
is
assumed
for
possible
inaccuracies
or
omission.
Specifications are su
bject to chan
ge without notice.
P
age
3/3
REV 04-
20
-
17
©
2016
Lu
na Optoelectronics
. All rights
reserved.
Luna Optoelectro
nics,
1240 Avenida
Acaso, Camarillo
CA 93012 • P
hone (805) 98
7
-
0146 • Fax (805)
484
-
9935
REFLOW PR
OFILE
1.E-
09
1.E-
08
1.E-
07
1.E-
06
1.E-
05
0.01
0.10
1.00
10.00
100.00
1,000.00
Nois
e
V
oltage
[V
rms/Hz
1/2
]
Fre
quency
[kHz]
P1-P3
PDB-C160SM
Mfr. #:
Buy PDB-C160SM
Manufacturer:
Description:
SENSOR PHOTODIODE 850NM 2SMD GW
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
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EMS
Payment:
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PDB-C160SM