AMMP-6232-TR2G Datasheet AMMP-6232-TR2G, AMMP-6232-BLKG, AMMP-6232-TR1G | P1-P3

AMMP-6232

18 to 32 GHz GaAs High Linearity LNA

in SMT Package

Data Sheet

Features

• Surface Mount Package, 5.0 x 5.0 x 1.25 mm

• Unconditionally Stable

• 50W Input and Output Match

Specications (Vdd = 4.0V, Idd = 138mA)

• RF Frequencies: 18 - 32 GHz

• High Output IP3: 29dBm

• High Small-Signal Gain: 23dB

• Typical Noise Figure: 3dB

Applications

• Microwave Radio systems

• Satellite VSAT, DBS Up/Down Link

• LMDS & Pt-Pt mmW Long Haul

• Broadband Wireless Access

(including 802.16 and 802.20 WiMax)

• WLL and MMDS loops

Functional Block Diagram

Description

Avago’s AMMP-6232 is an easy-to-use broadband, high

gain, high linearity Low Noise Amplier in a surface

mount package. The wide band and unconditionally

stable performance makes this MMIC ideal as a primary

or sub-sequential low noise block or a transmitter driver.

The MMIC has 4 gain stages and requires a 4V, 138mA

power supply for optimal performance. Since this MMIC

covers several bands, it can reduce part inventory and

increase volume purchase options The MMIC is fabricated

using PHEMT technology. The surface mount package

eliminates the need of “chip & wire” assembly for lower

cost. This MMIC is fully SMT compatible with backside

grounding and I/Os.

Package Diagram

PinFunction

2Vdd

4RFout

8RFin

Top view

Package base: GND

123

100pF

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model (Class A) =60V

ESD Human Body Model (Class 1A) = 250V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Note:

1. This MMIC uses depletion mode pHEMT devices.

2. Negative voltage is used for the gate bias

1 2 3

7 56

8RF IN

RF OUT

VddNC

VgNC

Note: MSL Rating = Level 2A

Electrical Specications

1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.

2. Pre-assembly into package performance veried 100% on-wafer per AMMC-6220 published specications.

3. This nal package part performance is veried by a functional test correlated to actual performance at one or more

frequencies.

4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. All tested parameters guaranteed with measurement accuracy +/-1.5 dB for gain and +/-0.4dB for NF

Table 1. RF Electrical Characteristics

TA=25°C, Vdd=4.0V, Idd=135mA, Zo=50 Ω

Parameter Min Typ. Max Unit Comment

Small Signal Gain, Gain 19 23 dB Test Frequency = 20, 26, 29 GHz

Noise Figure into 50 Ω, NF 3 4.5 dB Test Frequency = 20, 26, 29 GHz

Output Power at 1 dB Gain Compression, P-1dB 18 dBm

Output Power at 3 dB Gain Compression, Psat 20 dBm

Output Third Order Intercept Point, OIP3 29 dBm

Isolation, Iso -45 dB

Input Return Loss, RLin -10 dB

Output Return Loss, RLout -10 dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description Min. Typical Max. Unit Comments

Drain Supply Current, Idd 135 150 mA Vd = 4.5 V, Under any RF power drive and temperature

Drain Supply Voltage, Vd 3 4 5 V

Gate Bias Current, Ig 0.1 mA

Gate Bias Voltage, Vg -1.1 -0.95 -0.8 V

Table 3. Thermal Properties

Parameter Test Conditions Value

Thermal Resistance, qjc

Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C

Thermal Resistance at backside temperature Tb=25°C

qch-b = 35.1 °C/W

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Description Pin Min. Max. Unit Comments

Drain to Ground Supply Voltage Vdd 5.5 V

Gate-Drain Voltage Vgd -8 V

Drain Current Idd 200 mA

Gate Bias Voltage Vg +0.8 V

Gate Bias Current Ig 1 mA

RF CW Input Power Pin 10 dBm

Channel Temperature +150 °C

Storage Temperature -65 +150 °C

Maximum Assembly Temperature +260 °C 20 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

P1-P3 P4-P6 P7-P8

AMMP-6232-TR2G

Mfr. #:

Buy AMMP-6232-TR2G

Manufacturer:

Broadcom / Avago

Description:

RF Amplifier 18-32GHz Hi-Lin LNA

Lifecycle:

New from this manufacturer.

Delivery:

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AMMP-6232-TR2G

AMMP-6232-TR2G

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