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2SK3430-AZ

P1-P3P4-P6P7-P9P10-P10
Data Sheet D14599EJ3V0DS
5
2SK3430
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
−50
4
8
12
0
50
100 150
I
D
= 40 A
16
20
24
V
GS
= 4.0 V
Pulsed
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
100000
0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS = 0 V
1
0.1
10
1.0 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
20 3010 40 50 60 70 80
10
20
30
40
50
60
70
80
2
0
4
6
8
10
12
14
16
V
DS
V
GS
V
DD
= 32 V
20 V
8 V
I
D
= 80 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 0 V
V
GS
= 10 V
SWITCHING CHARACTERISTICS
I
D - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
100
10
10.1
1000
10000
10 100
tf
tr
td(on)
td(off)
Data Sheet D14599EJ3V0DS
6
2SK3430
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1
10
100
1
m10
m
V
DD
= 20
V
R
G
= 25 Ω
V
GS
= 20
→
0 V
I
AS
= 37
A
10
µ
100
µ
0.1
E
A
S
= 137 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50
75 100
160
140
120
100
80
60
40
20
0
125 150
V
DD
= 20 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 37 A
Data Sheet D14599EJ3V0DS
7
2SK3430
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
4) TO-220SMD (MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R TYP.
0.8R TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
.
Remark
The diode connected between the gate and source of
the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit
is externally required if a voltage exceeding the rated
voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
★
P1-P3P4-P6P7-P9P10-P10

2SK3430-AZ

Mfr. #:
Buy 2SK3430-AZ
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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