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2SK3430-Z-E1-AZ
P1-P3
P4-P6
P7-P9
P10-P10
Data Sheet D14599EJ3V
0DS
5
2SK3430
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
˚
C
R
DS(on)
- Drain to Source On-state Resistance - m
Ω
0
−
50
4
8
12
0
50
100
150
I
D
= 40 A
16
20
24
V
GS
= 4.0 V
Pulsed
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
100000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1.0
10
100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
20
30
10
40
50
60
70
80
10
20
30
40
50
60
70
80
2
0
4
6
8
10
12
14
16
V
DS
V
GS
V
DD
= 32 V
20 V
8 V
I
D
= 80 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 0 V
V
GS
= 10 V
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10
1
0.1
1000
10000
10
100
t
f
t
r
t
d(on)
t
d(off)
Data Sheet D14599EJ3V
0DS
6
2SK3430
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1
10
100
1
m1
0
m
V
DD
= 20
V
R
G
= 25
Ω
V
GS
= 20
→
0 V
I
AS
= 37
A
10
µ
100
µ
0.1
E
A
S
= 137 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature -
˚
C
Energy Derating Factor - %
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 20 V
R
G
= 25
Ω
V
GS
= 20
→
0
V
I
AS
≤
37 A
Data Sheet D14599EJ3V
0DS
7
2SK3430
PA
CKAGE DRA
WINGS (Unit: mm)
1) TO-220AB
(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2)
TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0.
5
4
3) TO-263
(MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
4) TO-220SMD (MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R TYP.
0.8R TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note
This package is produced only in Japan.
.
Remark
The diode connected betw
een the gate and
source of
the transistor serv
es as a protector against ESD. W
hen
this device actually used, an additional protection circuit
is ex
ternally required if a voltage exceeding the rated
voltage may be applied to this dev
ice.
EQUIVA
LENT
CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
★
P1-P3
P4-P6
P7-P9
P10-P10
2SK3430-Z-E1-AZ
Mfr. #:
Buy 2SK3430-Z-E1-AZ
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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