Product Standards
MOS FET
SC8673010L
Electrical Characteristics Ta = 25 C 3 C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Dela
Time
*1
Rise Time
*1
Turn-off Dela
Time
*1
Fall Time
*1
Total Gate Charge
Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Dela
Time
*1
Rise Time
*1
Turn-off Dela
Time
*1
Fall Time
*1
Total Gate Charge
Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page
FET2
1.2 3
Symbol Conditions Min Typ Max
0.8 1.2
Gate to Drain Charge Qgd
Unit
Gate resistance rg f = 5 MHz
Body Diode Characteristic
Gate to Source Charge Qgs
Qg
td(off) 34
tf 4
6.3
tr 3
VDD = 15 V, VGS = 0 to 10 V
ID = 8 A
td(on) 7
Ciss 780 1 092
3
14
V
710
m
10
Drain-source On-state Resistance
RDS(on)1
ID = 8 A, VGS = 10 V
RDS(on)2
ID = 8 A, VGS = 4.5 V
Gate-source Threshold Voltage Vth ID = 1.01 mA, VDS = 10 V 1
10 VDS = 30 V, VGS = 0 V
A
Gate-source Leakage Current IGSS
VGS =
16 V, VDS = 0 V 10
A
Zero Gate Voltage Drain Current IDSS
Unit
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 30 V
2of8
FET1
Parameter Symbol Conditions Min Typ Max
pFCoss 160 224
Crss
VDS = 10 V, VGS = 0 V
f = 1 MHz
61 98
ns
VDD = 15 V, VGS = 10 to 0 V
ID = 8 A
ns
VDD = 15 V, VGS = 0 to 4.5 V
ID = 8 A
nC2.5
2.1
Parameter
Diode Forward Voltage VSD V
Parameter Symbol Conditions Min Typ Max Unit
IS = 8 A, VGS = 0 V
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10
A
Gate-source Leakage Current IGSS
VGS =
16 V, VDS = 0 V 10
A
Gate-source Threshold Voltage Vth ID = 4.38 mA, VDS = 10 V 1.3 3 V
Drain-source On-state Resistance
RDS(on)1
ID = 20 A, VGS = 10 V
RDS(on)2
ID = 20 A, VGS = 4.5 V
1.9 2.5
m
3.52.5
Ciss
VDS = 10 V, VGS = 0 V
f = 1 MHz
3 700
pFCoss 430 602
Crss 310 496
5 180
ns
tr 14
td(on)
VDD = 15 V, VGS = 0 to 10 V
ID = 20 A
13
ns
tf 9
td(off)
VDD = 15 V, VGS = 10 to 0 V
ID = 20 A
64
Qg
VDD = 15 V, VGS = 0 to 4.5 V
ID = 20 A
28
10
nCGate to Source Charge Qgs 9
Gate to Drain Charge Qgd
Gate resistance rg f = 5 MHz 0.8 3
Body Diode Characteristic
Parameter Symbol Conditions Min Typ Max Unit
0.9 1.2 VDiode Forward Voltage VSD IS = 20 A, VGS = 0 V
