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STD30NE06LT4

P1-P3P4-P6P7-P8
STD30NE06L
N - CHANNEL 60V - 0.025 Ω - 30A TO-252
STripFET POWER MOSFET
■
TYPICAL R
DS(on)
= 0.025
Ω
■
EXCEPTIONAL dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
LOW GATE CHARGE 100
o
C
■
APPLICATION ORIENTED
CHARACTERIZATION
■
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size
" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
DC-DC & DC-AC CONVERTERS
®
INTERNAL SCHEMATIC DIAGRAM
May 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 60 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)60V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at T
c
= 25
o
C30A
I
D
Drain Current (continuous) at T
c
= 100
o
C21A
I
DM
(•) Drain Current (pulsed) 120 A
P
tot
Total Dissipation at T
c
= 25
o
C55W
Derating Factor 0.37 W/
o
C
dv/dt (
1
) Peak Diode Recovery voltage slope 7 V/ns
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(
•
)
Pulse width limited by safe operating area
(
1
) I
SD
≤
30A, di/dt
≤
300 A/
µ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE V
DSS
R
DS(on)
I
D
STD30NE06L 60 V < 0.03 Ω 30 A
1
3
DPAK
TO-252
(Suffix "T4")
1/8
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
THERMAL DATA
R
thj-pcb
R
thj-amb
R
thj-sink
T
l
Thermal Resistance Junction-PC Board Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.72
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
30 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
100 mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA V
GS
= 0 60 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V ± 100 nA
ON (
∗
)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250 µA 1 1.7 2.5 V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 15 A
V
GS
= 5 V I
D
= 15 A
0.022
0.025
0.028
0.030
Ω
Ω
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
30 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 15 A 15 25 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 V 2370
350
90
pF
pF
pF
STD30NE06L
2/8
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V I
D
= 15 A
R
G
= 4.7
Ω
V
GS
= 5 V
(Resistive Load, see fig. 3)
27
100
50
135
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V I
D
= 30 A V
GS
= 5 V 31
13
13.5
41 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V I
D
= 30 A
R
G
= 4.7
Ω
V
GS
= 5 V
(Inductive Load, see fig. 5)
20
45
72
27
60
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
V
SD
(
∗
) Forward On Voltage I
SD
= 30 A V
GS
= 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 30 A di/dt = 100 A/
µ
s
V
DD
= 30 V T
j
= 150
o
C
(see test circuit, fig. 5)
55
0.1
3.5
ns
µ
C
A
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD30NE06L
3/8
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P8

STD30NE06LT4

Mfr. #:
Buy STD30NE06LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 60V 30A DPAK
Lifecycle:
New from this manufacturer.
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