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MJF15030

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 8
1 Publication Order Number:
MJF15030/D
MJF15030 (NPN),
MJF15031 (PNP)
Complementary Power
Transistors
For Isolated Package Applications
Designed for general−purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
Features
• Electrically Similar to the Popular MJE15030 and MJE15031
• No Isolating Washers Required, Reduced System Cost
• High Current Gain−Bandwidth Product
• UL Recognized, File #E69369, to 3500 V
RMS
Isolation
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
150 Vdc
Collector−Base Voltage V
CB
150 Vdc
Emitter−Base Voltage V
EB
5 Vdc
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H. ≤ 30%, T
A
= 25_C)
Per Figure 11
V
ISOL
4500
V
RMS
Collector Current − Continuous I
C
8 Adc
Collector Current − Peak I
CM
16 Adc
Base Current I
B
2 Adc
Total Power Dissipation (Note 2) @ T
C
= 25_C
Derate above 25_C
P
D
36
0.286
W
W/_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
2.0
0.016
W
W/_C
Operating and Storage Temperature Range T
J
, T
stg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Thermal Resistance, Junction−to−Case (Note 2)
R
q
JC
3.5
_C/W
Lead Temperature for Soldering Purposes T
L
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
TO−220 FULLPACK
CASE 221D
STYLE 2
3
1
COMPLEMENTARY SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS, 36 WATTS
2
http://onsemi.com
MJF15031G 50 Units/Rail
MJF15030G TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
MJF1503x = Specific Device Code
x = 0 or 1
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MARKING
DIAGRAM
TO−220 FULLPACK
(Pb−Free)
MJF1503xG
AYWW
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
MJF15030 (NPN), MJF15031 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
150 − Vdc
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0)
I
CEO
− 10
mAdc
Collector Cutoff Current
(V
CB
= 150 Vdc, I
E
= 0)
I
CBO
− 10
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 10
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (I
C
= 0.1 Adc, V
CE
= 2 Vdc)
(I
C
= 2 Adc, V
CE
= 2 Vdc)
(I
C
= 3 Adc, V
CE
= 2 Vdc)
(I
C
= 4 Adc, V
CE
= 2 Vdc)
h
FE
40
40
40
20
−
−
−
−
−
Typ
DC Current Gain Linearity
(V
CE
from 2 V to 20 V, I
C
from 0.1 A to 3 A) (NPN to PNP)
h
FE
2
3
Collector−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.1 Adc)
V
CE(sat)
− 0.5 Vdc
Base−Emitter On Voltage
(I
C
= 1 Adc, V
CE
= 2 Vdc)
V
BE(on)
− 1 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
30 − MHz
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. f
T
= ⎪h
fe
⎪• f
test
.
t, TIME (ms)
1
0.01
0.3
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.5 10 30 50 100 300 500 1K 3K 5K
SINGLE PULSE
R
q
JC(t)
= r(t) R
q
JC
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
153 10K
0.5
0.3
0.03
0.1 0.2 20 200 2K2
Figure 1. Thermal Response
MJF15030 (NPN), MJF15031 (PNP)
http://onsemi.com
3
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. Forward Bias Safe Operating Area
100 ms
5 ms
dc
20
3
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 200
5
3
10
2
0.1
0.03
WIREBOND LIMIT
THERMAL LIMIT
SECONDARY BREAKDOWN
LIMIT @ T
C
= 25°C
10 30 50 70
1
0.02
1002720
0.05
0.2
0.3
0.5
150
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 2 and 3 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
f
T
, CURRENT GAIN — BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
60
f, FREQUENCY (MHz)
0
Figure 3. Reverse Bias Switching Safe
Operating Area
Figure 4. Capacitances
10
V
R
, REVERSE VOLTAGE (VOLTS)
30 50 100
Figure 5. Small−Signal Current Gain Figure 6. Current Gain — Bandwidth Product
1000
50
500
1.5
C
ib
(NPN)
150
100
200
10
7
90
20
50
100
NPN
53
30
5
50
10
20
100
0.1 5 100.5 2
0.2
1
5 V
8
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
110
5
2
1
130 150
3
0
0 120 140
V
BE(off)
= 9 V
I
C
/I
B
= 10
T
C
= 25°C
h
fe
, SMALL-SIGNAL CURRENT GAIN
V
CE
= 10 V
I
C
= 0.5 A
T
C
= 25°C
10
0.5 5 1013
0.7
27
30
20
C
ib
(PNP)
PNP
(NPN)
(PNP)
0 V
1.5 V
3 V
C
ob
(PNP)
C
ob
(NPN)
P1-P3P4-P6

MJF15030

Mfr. #:
Buy MJF15030
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 8A 150V 36W NPN
Lifecycle:
New from this manufacturer.
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