C3D25170H

1

Subject to change without notice.

www.cree.com/power

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C3D25170H–Silicon Carbide Schottky Diode

Z-Rec

™

RectifieR

Features

• 1700-Volt Schottky Rectier

• Zero Reverse Recovery Current

• Zero Forward Recovery Voltage

• High-Frequency Operation

• Temperature-Independent Switching Behavior

• Extremely Fast Switching

• Halogen-Free; RoHS Complaint

Benets

• Replace Bipolar with Unipolar Rectiers

• Essentially No Switching Losses

• Higher Efciency

• Reduction of Heat Sink Requirements

• Parallel Devices Without Thermal Runaway

Package

Maximum Ratings

Symbol Parameter Value Unit Test Conditions Note

V

RRM

Repetitive Peak Reverse Voltage 1700 V

V

RSM

Surge Peak Reverse Voltage 1700 V

V

DC

DC Blocking Voltage 1700 V

I

F

Continuous Forward Current 26.3 A T

C

<135˚C

I

FRM

Repetitive Peak Forward Surge Current

99

57

A

T

C

=25˚C, t

P

=10 ms, Half Sine Wave, D=1

T

C

=110˚C, t

P

=10 ms, Half Sine Wave, D=1

I

FSM

Non-Repetitive Peak Forward Surge

Current

117

88

A

T

C

=25˚C, t

P

=10ms, Half Sine Wave, D=1

T

C

=110˚C, t

P

=10 ms, Half Sine Wave, D=1

P

tot

Power Dissipation

377

163

W

T

C

=25˚C

T

C

=110˚C

T

c

Maximum Case Temperature 135 ˚C

T

J

Operating Junction Range

-55 to

+175

˚C

T

stg

Storage Temperature Range

-55 to

+135

˚C

TO-247 Mounting Torque

1

8.8

Nm

lbf-in

M3 Screw

6-32 Screw

Part Number Package Marking

C3D25170H TO-247-2 C3D25170

V

RRM

= 1700 V

I

F;

T

C

<135˚C = 26.3 A

Q

c

= 230 nC

PIN 1

PIN 2

CASE

2 C3D25170H Rev. -

0

5

10

15

20

25

30

35

40

45

50

0 1 2 3 4 5 6 7

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

V

F

Forward Voltage

1.8

3.2

2.5

4

V

I

F

= 25 A T

J

=25°C

I

F

= 25 A T

J

=175°C

I

R

Reverse Current

20

100

100

400

μA

V

R

= 1700 V T

J

=25°C

V

R

= 1700 V T

J

=175°C

Q

C

Total Capacitive Charge 230 nC

V

R

= 1700 V, I

F

= 25 A

di/dt = 200 A/μs

T

J

= 25°C

C Total Capacitance

2079

187.5

97

pF

V

R

= 0 V, T

J

= 25°C, f = 1 MHz

V

R

= 200 V, T

J

= 25˚C, f = 1 MHz

V

R

= 800 V, T

J

= 25˚C, f = 1 MHz

Note:

1. This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Symbol Parameter Typ. Unit

R

θJC

Thermal Resistance from Junction to Case 0.4 °C/W

Typical Performance

Figure 1. Forward Characteristics

0

1

2

3

4

5

6

7

8

0 200 400 600 800 1000 1200 1400 1600 1800 2000

Figure 2. Reverse Characteristics

I

F

(A)

V

F

(V)

I

R

(μA)

V

R

(V)

T

J

=-55°C

T

J

= 25°C

T

J

= 75°C

T

J

=125°C

T

J

=175°C

T

J

=-55°C

T

J

= 25°C

T

J

= 75°C

T

J

=125°C

T

J

=175°C

3 C3D25170H Rev. -

Typical Performance

0

20

40

60

80

100

120

140

25

50

75

100

125

150

175

I

F(peak)

(A)

T

C

˚C

0

50

100

150

200

250

300

350

400

25 50 75 100 125 150 175

T

C

˚C

P

Tot

(W)

Figure 3. Current Derating

0

500

1000

1500

2000

2500

0.1 1 10 100 1000

Figure 4. Power Derating

0

20

40

60

80

100

120

140

160

180

0 200 400 600 800 1000

Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage

Qrr (nC)

V

R

(V)

C (pF)

V

R

(V)

10% Duty

30% Duty

50% Duty

70% Duty

DC

C3D25170H

Mfr. #:

Manufacturer:

N/A

Description:

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1700V, 25A

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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C3D25170H