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GI858-E3/73

P1-P3P4-P4
GI850, GI851, GI852, GI854, GI856, GI858
www.vishay.com
Vishay General Semiconductor
Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G
Revision: 27-Feb-14
1
Document Number: 88630
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V
I
FSM
100 A
t
rr
200 ns
I
R
10 μA
V
F
1.25 V
T
J
max. 150 °C
Package DO-201AD
Diode variation Single die
DO-201AD
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GI850 GI851 GI852 GI854 GI856 GI858 UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 V
Maximum non-repetitive peak reverse voltage V
RSM
75 150 250 450 650 880 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 90 °C
I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
100 A
Operating junction and
storage temperature range
T
J
, T
STG
-50 to +150 °C
GI850, GI851, GI852, GI854, GI856, GI858
www.vishay.com
Vishay General Semiconductor
Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G
Revision: 27-Feb-14
2
Document Number: 88630
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curves Fig. 2 - Maximum Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GI850 GI851 GI852 GI854 GI856 GI858 UNIT
Maximum
instantaneous
forward voltage
3.0 A T
A
= 25 °C
V
F
1.25
V
9.4 A T
J
= 175 °C 1.10
Maximum DC reverse
current at rated DC
blocking voltage
T
A
= 25 °C
I
R
10
μA
T
A
= 100 °C 150 150 200 250 300 500
Maximum reverse
recovery time
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
t
rr
200 ns
Maximum reverse
recovery current
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
I
RM(REC)
2.0 A
Typical junction
capacitance
4.0 V, 1 MHz C
J
28 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GI850 GI851 GI852 GI854 GI856 GI858 UNIT
Typical thermal resistance
R
JA
(1)
22
°C/W
R
JL
(1)
8.0
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GI856-E3/54 1.1 54 1400 13" diameter paper tape and reel
GI856-E3/73 1.1 73 1000 Ammo pack packaging
Temperature (°C)
Average Forward Rectied Current (A)
30
70
90
110
130
150
170
2.0
6.0
8.0
4.0
0
50
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsink
L = Lead Length
L = 0.25" (6.3 mm)
L = 0.375" (9.5 mm)
T
A
= Ambient Temperature
T
L
= Lead Temperature
0.375" (9.5 mm) Lead Length
Peak Forward Surge Current (A)
1
10
100
100
1000
10
Number of Cycles at 60 Hz
T
J
= 150 °C
T
J
= 25 °C
8.3 ms Single Half Sine-Wave
Repetitive
Non-Repetitive
T
J
= 150 °C
T
J
= 25 °C
GI850, GI851, GI852, GI854, GI856, GI858
www.vishay.com
Vishay General Semiconductor
Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G
Revision: 27-Feb-14
3
Document Number: 88630
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0.1
1
10
100
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
10
1
0.1
0.01
0 20 40 60 80 100
T
J
= 25 °C
T
J
= 50 °C
T
J
= 100 °C
Reverse Voltage (V)
Junction Capacitance (pF)
1
10
100
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
P1-P3P4-P4

GI858-E3/73

Mfr. #:
Buy GI858-E3/73
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 800 Volt 3.0A 200ns 100 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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