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BT151X-800C,127

P1-P3P4-P6P7-P9P10-P12
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
F
BT151X-800C
SCR
16 March 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack"
plastic package intended for use in applications requiring high bidirectional blocking
voltage capability and high thermal cycling performance.
2. Features and benefits
•
High bidirectional blocking voltage capability
•
High thermal cycling performance
•
Isolated mounting base package
•
Planar passivated for voltage ruggedness and reliability
3. Applications
•
Capacitive Discharge Ignition (CDI)
•
Crowbar protection
•
Inrush protection
•
Motor control
•
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
V
RRM
repetitive peak reverse
voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- - 100 A
I
T(RMS)
RMS on-state current half sine wave; T
h
≤ 69 °C; Fig. 1;
Fig. 2; Fig. 3
- - 12 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 2 15 mA
NXP Semiconductors
BT151X-800C
SCR
BT151X-800C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 2 / 11
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT151X-800C TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
V
RRM
repetitive peak reverse voltage - 800 V
I
T(AV)
average on-state current half sine wave; T
h
≤ 69 °C - 7.5 A
I
T(RMS)
RMS on-state current half sine wave; T
h
≤ 69 °C; Fig. 1;
Fig. 2; Fig. 3
- 12 A
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- 100 AI
TSM
non-repetitive peak on-state
current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
- 120 A
I
2
t I
2
t for fusing
t
p
= 10 ms; SIN - 50
A
2
s
dI
T
/dt rate of rise of on-state current I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
- 50 A/µs
I
GM
peak gate current - 2 A
P1-P3P4-P6P7-P9P10-P12

BT151X-800C,127

Mfr. #:
Buy BT151X-800C,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs Thyristor SCR 800V 1 10A 3-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
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