PMEG3002EJ_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 15 May 2009 6 of 13
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
=85°C
(4) T
j
=25°C
(5) T
j
= 40 °C
(1) T
j
= 125 °C
(2) T
j
=85°C
(3) T
j
=25°C
(4) T
j
= 40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; T
amb
=25°C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
006aab497
V
F
(V)
0 0.60.40.2
10
3
10
2
10
1
1
I
F
(A)
10
4
(1)
(2)
(3) (4) (5)
006aab498
V
R
(V)
0302010
10
2
10
3
10
4
10
5
10
6
10
7
10
8
I
R
(A)
10
9
(1)
(2)
(3)
(4)
V
R
(V)
0302010
006aab499
35
C
d
(pF)
0
5
10
15
20
25
30
PMEG3002EJ_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 15 May 2009 7 of 13
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ =1
T
j
= 125 °C
(1) δ =1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
I
F(AV)
(A)
0.0 0.30.20.1
006aab500
0.14
P
F(AV)
(W)
0.0
0.02
0.04
0.06
0.08
0.10
0.12
(1)
(2)
(3)
(4)
006aab501
V
R
(V)
0302010
0.08
0.12
0.04
0.16
0.20
P
R(AV)
(W)
0.0
(1)
(2)
(4)
(3)
T
amb
(°C)
0 50 100 150 1751257525
006aab502
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aab503
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
PMEG3002EJ_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 15 May 2009 8 of 13
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
8. Test information
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values
Fig 12. Average forward current as a function of
solder point temperature; typical values
T
amb
(°C)
0 50 100 150 1751257525
006aab504
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
T
sp
(°C)
0 50 100 150 1751257525
006aab505
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
(1) I
R
=1mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 13. Reverse recovery time test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50
I
F
D.U.T.
R
i
= 50
SAMPLING
OSCILLOSCOPE
mga881

PMEG3002EJ,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 30V 0.2A 2-Pin Diode Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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