Vishay Siliconix
Si4890DY
Document Number: 70855
S09-0869-Rev. B, 18-May-09
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• High-Efficiency PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.012 at V
GS
= 10 V
± 11
0.020 at V
GS
= 4.5 V
± 9
SO-8
D
D
D
D
S
S
S
G
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4890DY-T1-E3 (Lead (Pb)-free)
Si4890DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 25
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
± 11
A
T
A
= 70 °C
± 9
Pulsed Drain Current (10 µs Pulse Width)
I
DM
± 50
Continuous Source Current (Diode Conduction)
a, b
I
S
2.3
Maximum Power Dissipation
a, b
T
A
= 25 °C
P
D
2.5
W
T
A
= 70 °C
1.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
a
t ≤ 10 s
R
thJA
50
°C/W
Steady State 70