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IXYB82N120C3H1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYB82N120C3H1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125
o
C
R
G
= 2
Ω
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 82A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
© 2018 IXYS CORPORATION, All Rights Reserved
IXYB82N120C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
8
2 4 6 8 10 12 14 16 18
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
T
J
= 125
o
C , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
40
60
80
100
120
140
160
180
200
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f i
- Nanoseconds
140
220
300
380
460
540
620
700
780
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
10
E
on
- MilliJoules
E
off
E
on
R
G
= 2
Ω
V
GE
= 15V
V
CE
= 600V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
R
G
= 2
Ω
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
40
80
120
160
200
240
280
40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
170
180
190
200
210
220
230
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYB82N120C3H1
IXYS REF: IXY_82N120C3(8M)12-13-12-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
140
40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
0
10
20
30
40
50
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
22
24
26
28
30
32
34
36
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r i
- Nanoseconds
20
25
30
35
40
45
50
55
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6P7-P7

IXYB82N120C3H1

Mfr. #:
Buy IXYB82N120C3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
Lifecycle:
New from this manufacturer.
Delivery:
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