SUM40N02-12P-E3

SUM40N02-12P
Vishay Siliconix
www.vishay.com
4
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
0.8
1.0
1.2
1.4
1.6
1.8
50 25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
T
J
Junction Temperature (_C) V
SD
Source-to-Drain Voltage (V)
Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
V
GS
= 10 V
I
D
= 20 A
T
J
= 25_C
T
J
= 150_C
0
20
22
24
26
28
30
50 25 0 25 50 75 100 125 150 175
T
J
Junction Temperature (_C)
(V)V
(BR)DSS
I
D
= 250 mA
r
DS(on)
On-Resiistance
(Normalized)
SUM40N02-12P
Vishay Siliconix
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
www.vishay.com
5
THERMAL RATINGS
0
10
20
30
40
50
0 25 50 75 100 125 150 175
Safe Operating Area
1000
10
0.1 1 10 100
*Limited
by r
DS(on)
0.1
100
T
C
= 25_C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
Ambient Temperature (_C)
Drain Current (A)I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
3
10
2
10
1
1
Normalized Effective Transient
Thermal Impedance
10
0.2
0.1
Duty Cycle = 0.5
Drain Current (A)I
D
1 ms
10 ms
dc, 100 ms
10, 100 ms
Single Pulse
0.05
0.02
1
10
4
V
DS
Drain-to-Source Voltage (V)
*V
GS
u minimum V
GS
at which r
DS(on)
is specified
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72111.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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SUM40N02-12P-E3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET N-CH 20V 40A D2PAK
Lifecycle:
New from this manufacturer.
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