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MJE15033G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 6
1 Publication Order Number:
MJE15032/D
MJE15032 (NPN),
MJE15033 (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
Features
• High DC Current Gain
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CB
250 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
8.0 Adc
Collector Current − Peak I
CM
16 Adc
Base Current I
B
2.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
50
0.40
W
W/_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
2.0
0.016
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
2.5
_C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
62.5
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
TO−220
CASE 221A
STYLE 1
MARKING
DIAGRAM
MJE1503x = Specific Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
http://onsemi.com
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
1
2
3
4
MJE1503xG
AYWW
MJE15032G TO−220
(Pb−Free)
50 Units/Rail
MJE15033G TO−220
(Pb−Free)
50 Units/Rail
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
MJE15032 (NPN), MJE15033 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
250 −
Vdc
Collector Cutoff Current
(V
CB
= 250 Vdc, I
E
= 0)
I
CBO
− 10
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 10
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 5.0 Vdc)
h
FE
70
50
10
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
V
CE(sat)
− 0.5
Vdc
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
V
BE(on)
− 1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
30 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f
T
= ⎪h
fe
⎪• f
test
.
MJE15032 (NPN), MJE15033 (PNP)
http://onsemi.com
3
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 1. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
250ms
100 ms
50ms
10ms
100
1.0
Figure 2. MJE15032 & MJE15033
Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
0.01
I
C
, COLLECTOR CURRENT (AMPS)
10 1000
1.0
100
0.1
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 2 and 4 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0
Figure 3. Power Derating
T, TEMPERATURE (°C)
0
40 60 100 120 160
40
T
C
20
60
P
D
, POWER DISSIPATION (WATTS)
0
2.0
T
A
1.0
3.0
80 140
T
C
T
A
20
P1-P3P4-P6

MJE15033G

Mfr. #:
Buy MJE15033G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 8A 250V 50W PNP
Lifecycle:
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