TSM35N10CP ROG Datasheet TSM35N10CP ROG | P1-P3

TSM35N10

100V N-Channel Power MOSFET

1/6

Version: B13

TO

-

25

2

(DPAK)

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(mΩ) I

D

(A)

100 37 @ V

GS

=10V 32

Features

● Advanced Trench Technology

● Low R

DS(ON)

37mΩ (Max.)

● Low gate charge typical @ 34nC (Typ.)

● Low Crss typical @ 45pF (Typ.)

Block Diagram

N-Channel MOSFET

Ordering Information

Part No. Package

Packing

TSM35N10CP ROG

TO-252 2.5Kpcs / 13” Reel

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating

(Ta = 25

o

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

100 V

Gate-Source Voltage V

GS

±20 V

Continuous Drain Current

T

C

=25°C

I

D

32

A

T

C

=70°C 26

T

A

=25°C 5

T

A

=70°C 4

Drain Current-Pulsed Note 1 I

DM

70 A

Avalanche Current, L=0.1mH I

AS

, I

AR

35 A

Avalanche Energy, L=0.1mH E

AS

, E

AR

61 mJ

Maximum Power Dissipation

T

C

=25°C

P

D

83.3

W

T

C

=70°C 53.3

T

A

=25°C 2

T

A

=70°C 1.3

Storage Temperature Range T

STG

-55 to +150 °C

Operating Junction Temperature Range T

J

-55 to +150 °C

* Limited by maximum junction temperature

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Case RӨ

JC

1.5

o

C/W

Thermal Resistance - Junction to Ambient RӨ

JA

62

o

C/W

Definition

:

1. Gate

2. Drain

3. Source

TSM35N10

100V N-Channel Power MOSFET

2/6

Version: B13

Electrical Specifications

(Ta = 25

o

C unless otherwise noted)

Parameter Conditions Symbol

Min Typ Max

Unit

Static

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= 250uA BV

DSS

100 -- -- V

Drain-Source On-State Resistance

V

GS

= 10V, I

D

= 10A R

DS(ON)

-- 30 37 mΩ

V

GS

= 4.5V, I

D

= 10A R

DS(ON)

-- 32 42 mΩ

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250uA V

GS(TH)

1 2 3 V

Zero Gate Voltage Drain Current V

DS

= 100V, V

GS

= 0V I

DSS

-- -- 1 uA

Gate Body Leakage V

GS

= ±20V, V

DS

= 0V I

GSS

-- -- ±100

nA

Dynamic

Total Gate Charge

V

DS

= 50V, I

D

= 10A,

V

GS

= 10V

Q

g

-- 34 --

nC

Gate-Source Charge Q

gs

-- 6 --

Gate-Drain Charge Q

gd

-- 9 --

Input Capacitance

V

DS

= 30V, V

GS

= 0V,

f = 1.0MHz

C

iss

-- 1598 --

pF

Output Capacitance C

oss

-- 132 --

Reverse Transfer Capacitance C

rss

-- 45 --

Switching

Turn-On Delay Time

V

GS

= 10V, V

DS

= 50V,

R

G

= 3Ω

t

d(on)

-- 7 --

nS

Turn-On Rise Time t

r

--

7

--

Turn-Off Delay Time t

d(off)

-- 29 --

Turn-Off Fall Time t

f

-- 7 --

Drain-Source Diode Characteristics and Maximum Rating

Drain-Source Diode Forward

Voltage

V

GS

=0V, I

S

=10A V

SD

-- 0.7 -- V

Reverse Recovery Time

I

S

= 10A, T

J

=25

o

C

dI/dt = 500A/us

t

fr

-- 32 -- nS

Reverse Recovery Charge Q

fr

-- 200 -- nC

Notes:

1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

2. Rθ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins. Rθ

JC

is guaranteed by design while Rθ

CA

is determined by the user's board design. Rθ

JA

shown below for single device operation on FR-4 in still air

TSM35N10

100V N-Channel Power MOSFET

3/6

Version: B13

Electrical Characteristics Curve

(Tc = 25

o

C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Gate-Source Voltage

Gate Charge

On-Resistance vs. Junction Temperature

Capacitance

TSM35N10CP ROG

TSM35N10CP ROG

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