HSMS-280R-BLKG

HSMS-280x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specically designed for both
analog and digital applications. This series oers a wide
range of specica tions and package con gura tions to
give the designer wide exi bility. The HSMS-280x series
of diodes is optimized for high voltage applications.
Note that Avagos manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent sites
on the wafer, assuring the highest degree of match.
Package Lead Code Identication, SOT-23/SOT-143 (Top View)
Package Lead Code Identication, SOT-323 (Top View) Package Lead Code Identication, SOT-363 (Top View)
Features
x Surface Mount Packages
x High Breakdown Voltage
x Low FIT (Failure in Time) Rate*
x Six-sigma Quality Level
x Single, Dual and Quad Versions
x Tape and Reel Options Available
x Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
COMMON
CATHODE
#4
UNCONNECTED
PAIR
#5
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
12
3
12
34
BRIDGE
QUAD
#8
12
34
12
3
12
3
12
3
COMMON
CATHODE QUAD
M
UNCONNECTED
TRIO
L
BRIDGE
QUAD
P
COMMON
ANODE QUAD
N
RING
QUAD
R
123
654
HIGH ISOLATION
UNCONNECTED PAIR
K
123
654
123
654
123
654
123
654
123
654
COMMON
CATHODE
F
COMMON
ANODE
E
SERIES
C
SINGLE
B
2
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363
I
f
Forward Current (1 μs Pulse) Amp 1 1
P
IV
Peak Inverse Voltage V Same as V
BR
Same as V
BR
T
j
Junction Temperature °C 150 150
T
stg
Storage Temperature °C -65 to 150 -65 to 150
T
jc
Thermal Resistance
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is dened to be the temperature at the package pins where contact is made to the circuit board.
Notes:
1. Package marking provides orientation and identication.
2. See “Electrical Specications” for appropriate package marking.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
Pin Connections and Package Marking, SOT-363
GUx
1
2
3
6
5
4
Electrical Specications T
A
= 25°C, Single Diode
[3]
Part
Number
HSMS
[4]
Package
Marking
Code
Lead
Code Conguration
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Forward
Voltage
V
F
(mV)
Maximum
Forward
Voltage
V
F
(V) @ I
F
(mA)
Maximum
Reverse
Leakage
I
R
(nA) @ V
R
(V)
Maximum
Capacitance
C
T
(pF)
Typical
Dynamic
Resistance
R
D
(Ω)
[5]
2800 A0 0 Single
70 410 1.0 @ 15 200 @ 50 2.0 35
2802 A2 2 Series
2803 A3 3 Common Anode
2804 A4 4 Common Cathode
2805 A5 5 Unconnected Pair
2808 A8 8 Bridge Quad
[4]
280B A0 B Single
280C A2 C Series
280E A3 E Common Anode
280F A4 F Common Cathode
280K AK K
High Isolation
Unconnected Pair
280L AL L Unconnected Trio
280M H M Common Cathode Quad
280N N N Common Anode Quad
280P AP P Bridge Quad
280R O R Ring Quad
Test Conditions I
R
= 10 mA I
F
= 1 mA V
F
= 0 V
f = 1 MHz
I
F
= 5 mA
Notes:
1. DV
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. DC
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Eective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.
5. R
D
= R
S
+ 5.2  at 25°C and I
f
= 5 mA.
3
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument eectively isolates
individual diode branches from the others, allowing
accurate capacitance measurement of each branch or
each diode. The conditions are: 20 mV R.M.S. voltage at 1
MHz. Avago denes this measurement as “CM”, and it is
equivalent to the capaci tance of the diode by itself. The
equivalent diagonal and adja cent capacitances can then
be calculated by the formulas given below.
In a quad, the diagonal capaci tance is the capacitance
between points A and B as shown in the gure below.
The diagonal capacitance is calculated using the follow-
ing formula
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent capacitance is the capacitance
between points A and C in the gure below. This capaci-
tance is calculated using the following formula
1
C
ADJACENT
= C
1
+ ____________
1 1 1
–– + –– + ––
C
2
C
3
C
4
This information does not apply to cross-over quad
diodes.
SPICE Parameters
Parameter Units HSMS-280x
B
V
V75
C
J0
pF 1.6
E
G
eV 0.69
I
BV
A E-5
I
S
A 3.00E-08
N 1.08
R
S
Ω30
P
B
V 0.65
P
T
2
M 0.5
C
j
R
j
R
S
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To eectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit, Diode Chip

HSMS-280R-BLKG

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
Schottky Diodes & Rectifiers 70 VBR 2 pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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