OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BYT30PI-1000

P1-P3P4-P5
®
BYT 30PI-1000
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED: Capacitance 15pF
SUITABLE APPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
October 1999 - Ed: 2A 1/5
Isolated
DOP3I
(Plastic)
Insulating voltage 2500 V
RSM
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 1000 V
V
RSM
Non Repetitive Peak Reverse Voltage 1000 V
I
FRM
Repetive Peak Forward Current
t
p
≤
10
µ
s
375 A
I
F (RMS)
RMS Forward Current 70 A
I
F (AV)
Average Forward Current T
c
= 50
°
C
δ
= 0.5
30 A
I
FSM
Surge non Repetitive Forward Current t
p
= 10ms
Sinusoidal
200 A
P Power Dissipation
T
c
= 50
°
C
60 W
T
stg
T
j
Storage and Junction Temperature Range - 40 to +150
°
C
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol Parameter Value Unit
R
th (j - c)
Junction-case 1.6
°
C/W
THERMAL RESISTANCE
K
A
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Synbol Test Conditions Min. Typ. Max. Unit
I
R
T
j
= 25
°
C
V
R
= V
RRM
100
µ
A
T
j
= 100
°
C
5mA
V
F
T
j
= 25
°
C
I
F
= 30A 1.9
V
T
j
= 100
°
C
1.8
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
T
j
= 25
°
CI
F
= 1A di
F
/dt = - 15A/
µ
s V
R
= 30V
165
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A 70
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
IRM
di
F
/dt = - 120A/
µ
s
V
CC
= 200 V I
F
= 30A
L
p
≤
0.05
µ
H T
j
= 100
°
C
See figure 11
200 ns
di
F
/dt = - 240A/
µ
s
120
I
RM
di
F
/dt = -120A/
µ
s
19.5 A
di
F
/dt = - 240A/
µ
s
22
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
C =
V
RP
V
CC
T
j
= 100
°
C V
CC
= 200V I
F
= I
F (AV)
di
F
/dt = - 30A/
µ
s L
p
= 5
µ
H See figure 12
4.5
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance
)
To evaluate the conduction losses use the following equations:
V
F
= 1.47 + 0.010 I
F
P = 1.47 x I
F(AV)
+ 0.010 I
F
2
(RMS)
Figure 1. Low frequency power losses versus
average current
Figure 2. Peak current versus form factor
2/5
BYT 30PI-1000
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Figure 3. Non repetitive peak surge current
versus overload duration
Figure 4. Thermal impedance versus pulse
width
Figure 5. Voltage drop versus forward current Figure 6. Recovery charge versus di
F
/d
t-
Figure 7. Recovery time versus di
F
/d
t-
Figure 8. Peak reverse current versus di
F
/d
t-
3/5
BYT 30PI-1000
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P5

BYT30PI-1000

Mfr. #:
Buy BYT30PI-1000
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 1KV 30A DOP3I
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet