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IPS521S
P1-P3
P4-P6
P7-P9
P10-P12
IPS521/IPS521S
www
.irf.com
7
Figure 8 - Normalized R
ds(on)
(%
)
Vs T
j
(
o
C)
50%
100%
150%
200%
-
50
0
50
100
150
Figure 9 - Rds(on) (m
Ω)
Vs I
out
(A)
0
50
100
02
46
8
1
0
Figure 7 - R
ds(on)
(m
Ω)
Vs V
cc
(V)
0
50
100
0
5
10
15
20
25
30
35
Figure 10 - Max. I
out
(A) Vs Load Inductance (uH)
0.
1
1
10
IPS521/IPS521S
8
www
.irf.com
Figure 12 - Transient Thermal Impedance (
o
C/W)
Vs Time (S)
0.
01
0.
1
1
10
100
__ TO220/SMD 220 free air
- - - Rth = 5 °C/W
1E-05
1E-04
1E-03
1E-02
1E-01
1e+00
1E+01
1E+02
1E+03
Figure 11a - Max load current (A) Vs Tamb (
o
C)
IPS521
0
5
10
25
50
75
100
125
150
Rthja= 20
°
C/W
Free air
Rthja= 40
°
C/W
Rthja= 10
°
C/W
Figure 11b - Max load current (A) Vs Tamb (
o
C)
IPS521S
0
5
10
15
-
50
0
50
100
150
Figure 13 - I
lim
(A) Vs Tj (
o
C)
0
5
10
25
50
75
100
125
150
1inch
²
fo
ot
print
Rthja= 35
°
C/W
Std.
f
oot
p
ri
n
t
Rthja= 60
°
C/W
IPS521/IPS521S
www
.irf.com
9
Figure 14 - E
on,
E
off
(
µ
J) Vs I
out
(A)
R
esi
sti
ve
l
oa
d
0
500
1000
1500
2000
2500
3000
3500
01234567
Eo n
Eo f f
Figure 15 - E
on (
µ
J)
Vs Load Inductance
(
µ
H)
(see Fig. 3)
Figure 16 - Diag Blanking time (
µ
S) Vs I
out
(A)
(resistive load - see Fig. 6)
0.
1
1
10
100
1000
1000
0
1E+01
1E+02
1E+03
1E+04
1E+05
1E+06
I=Imax vs Induct.(see fi
g
.10)
I=1.5A
0
25
50
75
100
125
150
01
23
Dia
g
on blankin
g
Diag off blanking
1.00E
-06
1.00E
-05
1.00E
-04
1.00E
-03
0
5
10
15
20
25
30
35
Figure 17 - I
cc (mA)
Vs V
cc
(V)
P1-P3
P4-P6
P7-P9
P10-P12
IPS521S
Mfr. #:
Buy IPS521S
Manufacturer:
Infineon Technologies
Description:
Gate Drivers IR_HSS-LSS-GATEDRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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