2001 Nov 07 3
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistors PEMZ1
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
= 0 − − 100 nA
V
CB
= 30 V; I
E
= 0; T
j
= 150 °C − − 10 μA
I
EBO
emitter-base cut-off current V
EB
= 4 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 6 V; I
C
= 1 mA 120 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 50 mA; I
B
= 5.0 mA; note 1 − − 200 mV
f
T
transition frequency I
C
= 2 mA; V
CE
= 12 V; f = 100 MHz 100 − − MHz
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 12 V; f = 1 MHz
TR1 (NPN) − − 1.5 pF
TR2 (PNP) − − 2.2 pF
