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NLAS5223MNR2G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 6
1 Publication Order Number:
NLAS5223/D
NLAS5223, NLAS5223L
Ultra-Low 0.5 W
Dual SPDT Analog Switch
The NLAS5223 is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low R
ON
of 0.5 , at V
CC
= 3.0 $ 0.3 V.
The part also features guaranteed Break Before Make (BBM)
switching, assuring the switches never short the driver.
Features
• Ultra−Low R
ON
, t0.5 at V
CC
= 3.0 $ 0.3 V
• NLAS5223 Interfaces with 2.8 V Chipset
• NLAS5223L Interfaces with 1.8 V Chipset
• Single Supply Operation from 1.65−3.6 V
• Smallest 1.4 x 1.8 x 0.75 mm Thin QFN Package
• Full 0−V
CC
Signal Handling Capability
• High Off−Channel Isolation
• Low Standby Current, t50 nA
• Low Distortion
• R
ON
Flatness of 0.15
• High Continuous Current Capability
$300 mA Through Each Switch
• Large Current Clamping Diodes at Analog Inputs
$100 mA Continuous Current Capability
• ESD Human Body Model > 2000 V
• These are Pb−Free Devices
Applications
• Cell Phone Audio Block
• Speaker and Earphone Switching
• Ring−Tone Chip / Amplifier Switching
• Modems
www.onsemi.com
MARKING
DIAGRAM
XXMG
G
XX = Specific Device Code
AU = NLAS5223
AV = NLAS5223L
M
= Date Code
G = Pb−Free Device
(Note: Microdot may be in either location)
WQFN−10
CASE 488AQ
1
V
CC
IN2
C
OM2
GND
8
9
10
12
NC1
NC2
NO1
76
5
4
3NO2
IN1
COM
1
FUNCTION TABLE
0
1
IN 1, 2 NO 1, 2 NC 1, 2
OFF
ON
ON
OFF
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
NLAS5223, NLAS5223L
www.onsemi.com
2
NC
IN
NOCOM
Figure 1. Logic Equivalent Circuit
PIN DESCRIPTION
QFN PIN # Symbol Name and Function
2, 5, 7, 10 NC1 to NC2, NO1 to NO2 Independent Channels
4, 8 IN1 and IN2 Controls
3, 9 COM1 and COM2 Common Channels
6 GND Ground (V)
1 V
CC
Positive Supply Voltage
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage −0.5 to +4.6 V
V
IS
Analog Input Voltage (V
NO
, V
NC
, or V
COM
) −0.5 v V
IS
v V
CC
+ 0.5 V
V
IN
Digital Select Input Voltage −0.5 v V
IN
v +4.6 V
I
anl1
Continuous DC Current from COM to NC/NO ±300 mA
I
anl−pk1
Peak Current from COM to NC/NO, 10 Duty Cycle (Note 1) ±500 mA
I
clmp
Continuous DC Current into COM/NO/NC with Respect to V
CC
or GND ±100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Defined as 10% ON, 90% OFF Duty Cycle.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 1.65 3.6 V
V
IN
Digital Select Input Voltage (OVT) Overvoltage Tolerance GND 3.6 V
V
IS
Analog Input Voltage (NC, NO, COM) GND V
CC
V
T
A
Operating Temperature Range −40 +85 °C
t
r
, t
f
Input Rise or Fall Time, SELECT V
CC
= 1.6 V − 2.7 V
V
CC
= 3.0 V − 3.6 V
20
10
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLAS5223, NLAS5223L
www.onsemi.com
3
NLAS5223 DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND)
Symbo
l
Parameter Condition V
CC
Guaranteed Limit
Uni
t
25°C −40°C to +85°C
V
IH
Minimum High−Level Input Voltage, Select
Inputs
3.0
3.6
1.4
1.7
1.4
1.7
V
V
IL
Maximum Low−Level Input Voltage, Select
Inputs
3.0
3.6
0.7
0.8
0.7
0.8
V
I
IN
Maximum Input Leakage Current, Select
Inputs
V
IN
= 3.6 V or GND 3.6 ±0.1 ±1.0
A
I
OFF
Power Off Leakage Current V
IN
= 3.6 V or GND 0 ±0.5 ±2.0
A
I
CC
Maximum Quiescent Supply Current
(Note 2)
Select and V
IS
= V
CC
or GND 1.65 to 3.6 ±1.0 ±2.0
A
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
NLAS5223 DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION
Symbol Parameter Condition V
CC
Guaranteed Maximum Limit
Uni
t
25°C −40°C to +85°C
Min Max Min Max
R
ON
NC/NO On−Resistance
(Note 3)
V
IN
= V
IL
or V
IN
= V
IH
V
IS
= GND to V
CC
I
COM
= 100 mA
3.0
3.6
0.3
0.3
0.4
0.4
R
FLAT
NC/NO On−Resistance Flatness
(Notes 3 and 4)
I
COM
= 100 mA
V
IS
= 0 to V
CC
3.0
3.6
0.15
0.15
0.15
0.15
R
ON
On−Resistance Match Between Channels
(Notes 3 and 5)
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 1.8 V;
I
COM
= 100 mA
3.0
3.6
0.05
0.05
0.05
0.05
I
NC(OFF)
I
NO(OFF)
NC or NO Off Leakage Current (Note 3) V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 0.3 V
V
COM
= 3.3 V
3.6 −10 10 −100 100 nA
I
COM(ON)
COM ON
Leakage Current
(Note 3)
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 3.3 V with
V
NC
floating or
V
NC
0.3 V or 3.3 V with
V
NO
floating
V
COM
= 0.3 V or 3.3 V
3.6 −10 10 −100 100 nA
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog
signal ranges.
5. R
ON
=
R
ON(MAX)
− R
ON(MIN)
between NC1 and NC2 or between NO1 and NO2.
P1-P3P4-P6P7-P9P10-P10

NLAS5223MNR2G

Mfr. #:
Buy NLAS5223MNR2G
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs DUAL SPDT ULTRA-LOW RON S
Lifecycle:
New from this manufacturer.
Delivery:
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