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AMMP-5618-TR1

P1-P3P4-P6P7-P7
AMMP-5618
6–20 GHz General Purpose Amplier
Data Sheet
Description
Avago’s AMMP-5618 is a high power, medium gain
amplifier that operates from 6 GHz to 20 GHz. The
amplier is designed to be an easy-to-use component
for any surface mount PCB application. In communication
systems, it can be used as a LO buer, or as a transmit
driver amplier. During typical operation with a single
5V supply, each gain stage is biased for Class-A operation
for optimal power output with minimal distortion. The
amplier has integrated 50Ω I/O match, DC blocking,
self-bias and choke to eliminate complex tuning and
assembly processes typically required by hybrid (discrete-
FET) ampliers. The package is fully SMT compatible with
backside grounding and I/O to simplify assembly.
Note: These devices are ESD sensitive. The following pre-
cautions are strongly recommended. Ensure that an ESD
approved carrier is used when dice are transported from
one destination to another. Personal grounding is to be
worn at all times when handling these devices.
Features
• 5 x 5 mm surface mount package
•
Broad band performance 6–20 GHz
• High +19 dBm output power
• Medium 13 dB typical gain
• 50Ω input and output match
• Single 5V (107 mA) supply bias
Applications
• Microwave radio systems
• Satellite VSAT
• Commercial grade military
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) = 50V
ESD Human Body Model (Class 0) = 150V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Package Diagram Functional Block Diagram
4
321
567
8
1 2 3
7 56
4
8RF IN
NC NCNC
RF OUT
NC Vd NC
Pin Function
1 NC
2 Vd
3 NC
4 RF_out
5 NC
6 NC
7 NC
8 RF_in
2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C, Vd=5V, Idq=107mA.
2. Pre-assembly into package performance veried 100% on-wafer per AMMC-5618 published specications
3. This nal package part performance is veried by a functional test correlated to actual performance at one or
more frequencies
4. Specications are derived from measurements in a 50Ω test environment. Aspects of the amplier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Γopt) matching.
Table 1. RF Electrical Characteristics (T
A
= 25°C, V
d
= 5.0V, I
dq
=107 mA, Zo=50 Ω)
Parameter Typ. Sigma Unit Frequency
Small-signal Gain, Gain 12
13
0.40 dB 5-6 GHz
Noise Figure into 50 Ω, NF 4.4 0.2 dB
Output Power at 1dB Gain Compression, P1dB 19 0.9 dBm
Third Order Intercept Point;
∆f=100MHz; Pin=-20dBm, OIP3
25
30
1.2 dBm 5-6 GHz
Input Return Loss, RLin -12 0.7 dB
Output Return Loss, Rlout -12 0.6 dB
Reverse Isolation, Isolation -40 1.2 dB
Table 2. Recommended Operating Range
1. Ambient operational temperature T
A
= 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb)= 25°C calculated from measured data.
Description
Specications
Unit CommentsMin. Typical Max.
Drain Supply Current, Id 107 140 mA (Vd = 5 V, Under any RF power
drive and temperature
Table 3. Thermal Properties
Parameter Test Conditions Value
Thermal Resistance, q
ch-b
Backside Temperature, T
A
=25°C
q
ch-b
= 34 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description
Specications
Unit CommentsMin. Max.
Positive Drain Voltage, Vd 7 V
Drain Current, Id 150 mA
RF Input Power (Pin), RFin 20 dBm CW
Channel Temperature, Tch +150 °C
Storage Temperature, Tstg -65 +150 °C
Max. Assembly Temp, Tmax +300 °C 30 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
3
Selected performance plots
These measurements are in 50Ω test environment at TA = 25°C, Vd = 5V, Id = 107 mA. Aspects of the amplier per-
formance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise
(Γopt) matching.
Figure 1. Gain.
FREQUENCY (GHz)
S21 (dB)
4 226 8 10 12 14 16 18 20
15
12
9
6
3
0
Figure 2. Isolation.
FREQUENCY (GHz)
S12 (dB)
4 226 8 10 12 14 16 18 20
0
-10
-20
-30
-40
-50
Figure 3. Input Return Loss.
FREQUENCY (GHz)
S11 (dB)
4 226 8 10 12 14 16 18 20
0
-5
-10
-15
-20
-25
-30
Figure 4. Output Return Loss.
FREQUENCY (GHz)
S22 (dB)
4 226 8 10 12 14 16 18 20
0
-5
-10
-15
-20
-25
-30
Figure 5. Noise Figure.
FREQUENCY (GHz)
NF (dB)
6 208 10 12 14 16 18
8
7
6
5
4
3
Figure 6. Typical Power, OP-1dB and OIP3.
FREQUENCY (GHz)
OP-1dB (dBm)
6 208 10 12 14 16 18
35
30
25
20
15
10
5
0
OP1dB
OIP3
P1-P3P4-P6P7-P7

AMMP-5618-TR1

Mfr. #:
Buy AMMP-5618-TR1
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier P-Amp 6-20GHz
Lifecycle:
New from this manufacturer.
Delivery:
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