SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 ✪
FEATURES
* For AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE BCP68
PARTMARKING DETAIL BCP69
BCP69 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-25 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
2W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-25 V
I
C
=-10µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20 V I
C
=- 30mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-10µA
Collector Cut-Off
Current
I
CBO
-100
-10
nA
µA
V
CB
=-25V
V
CB
=-25V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-10
µA
V
EB
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
- 0.6
-1.0
V
V
I
C
=-5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-1V*
Static Forward Current
Transfer Ratio
h
FE
BCP69
BCP69-25
50
63
160 250
400
400
I
C
=-5mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
Transition Frequency f
T
100 MHz I
C
=-100mA, V
CE
=-5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
BCP69
C
C
E
B
3 - 20
