IRFS3607TRLPBF Datasheet IRFS3607TRLPBF, IRFB3607PBF, IRFSL3607PBF | P1-P3

01/20/12

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

www.irf.com 1

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

Applications

l High Efficiency Synchronous Rectification in

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

HEXFET

®

Power MOSFET

S

D

G

V

DSS

75V

R

DS(on)

typ.

7.34m

max. 9.0m

I

D

80A

GDS

Gate Drain Source

TO-220AB

IRFB3607PbF

D

S

D

G

D

S

G

D

2

Pak

IRFS3607PbF

TO-262

IRFSL3607PbF

S

D

G

Absolute Maximum Ratings

Symbol Parameter Units

I

D

@ T

C

= 25°C Continuous Drain Current, VGS @ 10V

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C Maximum Power Dissipation W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage V

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

Thermal Resistance

Symbol Parameter Typ. Max. Units

R



JC

Junction-to-Case ––– 1.045

R



CS

Case-to-Sink, Flat Greased Surface, TO-220 0.50 ––– °C/W

R



JA

Junction-to-Ambient, TO-220 ––– 62

R



JA

Junction-to-Ambient (PCB Mount) , D

2

Pak

––– 40

120

46

14

140

-55 to + 175

± 20

0.96

10lb

in (1.1N m)

300

Max.

80

56

310

PD - 97308C

IRFB/S/SL3607PbF

2 www.irf.com

S

D

G

 I

SD

 46A, di/dt  1920A/μs, V

DD

V

(BR)DSS

, T

J

 175°C.

 Pulse width  400μs; duty cycle  2%.

 C

oss

eff. (TR) is a fixed capacitance that gives the same charging time

as C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 C

oss

eff. (ER) is a fixed capacitance that gives the same energy as

C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-

mended footprint and soldering techniques refer to application note #AN-994.

 R



is measured at T

J

approximately 90°C.

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Note that current limitations arising from heating of the

device leads may occur with some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

Jmax

, starting T

J

= 25°C, L = 0.12mH

R

G

= 25, I

AS

= 46A, V

GS

=10V. Part not recommended for use

above this value.

Static @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 75 ––– ––– V



V

(BR)DSS

/



T

J

Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 7.34 9.0 m



V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 μA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Dynamic @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 115 ––– ––– S

Q

g

Total Gate Charge ––– 56 84 nC

Q

gs

Gate-to-Source Charge ––– 13 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 16 –––

Q

sync

Total Gate Charge Sync. (Q

g

- Q

gd

) ––– 40 –––

R

G(int)

Internal Gate Resistance

–––

0.55 –––



t

d(on)

Turn-On Delay Time ––– 16 ––– ns

t

r

Rise Time ––– 110 –––

t

d(off)

Turn-Off Delay Time ––– 43 –––

t

f

Fall Time ––– 96 –––

C

iss

Input Capacitance ––– 3070 ––– pF

C

oss

Output Capacitance ––– 280 –––

C

rss

Reverse Transfer Capacitance ––– 130 –––

C

oss

eff. (ER) Effective Output Capacitance (Energy Related) ––– 380 –––

C

oss

eff. (TR) Effective Output Capacitance (Time Related) ––– 610 –––

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 80 A

(Body Diode)

I

SM

Pulsed Source Current ––– ––– 310

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

dv/dt Peak Diode Recovery ––– 27 ––– V/ns

t

rr

Reverse Recovery Time ––– 33 50 ns T

J

= 25°C V

R

= 64V,

––– 39 59 T

J

= 125°C I

F

= 46A

Q

rr

Reverse Recovery Charge ––– 32 48 nC T

J

= 25°C

di/dt = 100A/μs

––– 47 71 T

J

= 125°C

I

RRM

Reverse Recovery Current ––– 1.9 ––– A T

J

= 25°C

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

MOSFET symbol

R

G

= 6.8



V

GS

= 10V

V

DD

= 49V

I

D

= 46A, V

DS

=0V, V

GS

= 10V

I

D

= 46A

Conditions

V

DS

= 50V, I

D

= 46A

I

D

= 46A

V

GS

= 20V

V

GS

= -20V

V

DS

= 60V, V

GS

= 0V, T

J

= 125°C

showing the

V

DS

= 38V

Conditions

V

GS

= 10V

V

GS

= 0V

V

DS

= 50V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 60V

V

GS

= 0V, V

DS

= 0V to 60V

T

J

= 175°C, I

S

= 46A, V

DS

= 75V

T

J

= 25°C, I

S

= 46A, V

GS

= 0V

integral reverse

p-n junction diode.

Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 5mA

V

GS

= 10V, I

D

= 46A

V

DS

= V

GS

, I

D

= 100μA

V

DS

= 75V, V

GS

= 0V

IRFB/S/SL3607PbF

www.irf.com 3

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V



60μs PULSE WIDTH

Tj = 25°C

4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

4.5V



60μs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

2 3 4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V



60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 80A

V

GS

= 10V

1 10 100

V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0 102030405060

Q

G

,

Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 24V

V

DS

= 15V

I

D

= 46A

IRFS3607TRLPBF

IRFS3607TRLPBF

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