PROTECTION PRODUCTS
1
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PROTECTION PRODUCTS - Z-Pak
TM
uClamp0551Y
Ultra Small μClamp
®
1-Line ESD Protection
Description
Features
Nominal Dimensions Schematic
Revision 10/15/2013
Applications
Mechanical Characteristics
Cellular Handsets & Accessories
Keypads, Side Keys, Audio Ports
Portable Instrumentation
Digital Lines
Tablet PC
SLP0603P2X3E Package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 0.6 x 0.3 x 0.25 mm
Lead Finish: NiAu
Marking: Marking Code
Packaging: Tape and Reel
SLP0603P2X3E (Bottom View)
μClamp
®
TVS diodes are designed to protect sensitive
electronics from damage or latch-up due to ESD. They
are designed to replace 0201 size multilayer varistors
(MLVs) in portable applications such as cell phones, note-
book computers, and other portable electronics. They
feature large cross-sectional area junctions for conduct-
ing high transient currents. These devices offer desir-
able characteristics for board level protection including
fast response time, low operating and clamping voltage,
and no device degradation.
μClamp
®
0551Y features extremely good ESD protection
characteristics highlighted by low typical dynamic resis-
tance of 0.37 Ohms, low peak ESD clamping voltage,
and high ESD withstand voltage (+/-20kV contact per
IEC 61000-4-2). Low typical capacitance (6.9pF at
VR=0V) minimizes loading on sensitive cirucuits. Each
device will protect one data or power line operating at 5
Volts.
μClamp0551Y is in a 2-pin SLP0603P2X3E package
measuring 0.6 x 0.3 mm with a nominal height of
0.25mm. Leads are finished with lead-free NiAu. The
small package gives the designer the flexibility to
protect single lines in applications where arrays are not
practical. The combination of small size and high ESD
surge capability makes them ideal for use in portable
applications such as cellular phones, digital cameras,
and tablet PC’s.
High ESD withstand Voltage: +/-20kV (Contact/Air)
per IEC 61000-4-2
Able to withstand over 1000 ESD strikes per IEC
61000-4-2 Level 4
Ultra-small
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Protects one data or power line
Low reverse current: <3nA typical (VR=5V)
Working voltage: +/- 5V
Low capacitance: 6.9pF typical
Extremely low dynamic resistance: 0.37 Ohms (Typ)
Solid-state silicon-avalanche technology
Nominal Dimensions (in mm)
1
2
0.300
0.600
0.160
0.355 BSC
0.220
0.250