Document #: 001-15571 Rev. *B Page 4 of 7
Absolute Maximum Conditions
Parameter Description Min Max Unit
V
DD
Supply Voltage –0.5 4.6 V
T
S
Storage Temperature –65 150 °C
T
J
Junction Temperature – 125 °C
V
IO
Input and Output Voltage V
SS
– 0.5 V
DD
+ 0.5 V
ESD Electro-Static Discharge Voltage per MIL-STD-833, Method 3015 2000 – V
Recommended Operating Conditions
Parameter Description Min Typ Max Unit
V
DD
Operating Voltage 3.14 3.3 3.47 V
T
A
Ambient Temperature, Commercial Grade 0 – 70 °C
Ambient Temperature, Industrial Grade –40 -- 85 °C
C
LOAD
Max. Load Capacitance on the CLK output – – 15 pF
t
PU
Power up time for VDD to reach minimum specified voltage
(power ramps must be monotonic)
0.05 – 500 ms
Recommended Crystal Specifications
Parameter Name Description Min Typ Max Unit
F
NOM
Nominal Crystal Frequency Parallel resonance, fundamental mode,
and AT cut
8–30MHz
C
LNOM
Nominal Load Capacitance 6 – 30 pF
R
1
Equivalent Series Resistance
(ESR)
Fundamental mode – 35 50 Ω
DL Crystal Drive Level No external series resistor assumed – 0.5 2 mW
Notes
2. Not 100% tested, guaranteed by design.
3. I
DD
current specified for three CLK outputs running at 100 MHz.
4. Use CyClocksRT to calculate actual I
DD
for specific output frequency configurations.
DC Electrical Specifications
[2]
Parameter Name Description Min Typ Max Unit
I
OH
Output High Current V
OH
= V
DD
– 0.5, V
DD
= 3.3V (source) 12 24 – mA
I
OL
Output Low Current V
OL
= 0.5, V
DD
= 3.3V (sink) 12 24 – mA
V
IH
Input High Voltage 0.7*V
DD
–V
DD
+ 0.3 V
V
IL
Input Low Voltage V
SS
– 0.3 – 0.3*V
DD
V
C
IN1
Input Capacitance All input pins except XIN and XOUT – – 7 pF
C
IN2
Input Capacitance XIN and XOUT pins – 24 – pF
I
DD
[3, 4]
V
DD
Supply Current – 70 – mA
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