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STK850

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
STK850 Electrical characteristics
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Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B
VDSS
vs temperature
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Electrical characteristics STK850
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The previous curve gives the single pulse safe operating area for unclamped inductive
loads, under the following conditions:
P
D(AVE)
=0.5*(1.3*B
VDSS
*I
AV
)
E
AS(AR)
=P
D(AVE)
*t
AV
Where:
I
AV
is the allowable current in avalanche
P
D(AVE)
is the average power dissipation in avalanche (single pulse)
t
AV
is the time in avalanche
Figure 14. Allowable I
AV
vs time in avalanche
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STK850 Test circuits
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3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
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P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STK850

Mfr. #:
Buy STK850
Manufacturer:
STMicroelectronics
Description:
MOSFET Power MOSFET
Lifecycle:
New from this manufacturer.
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