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QS6M4TR

P1-P3P4-P6
QS6M4
Transistors
Rev.B 1/5
2.5V Drive
Nch+Pch
MOSFET
QS6M4
zStructure
Silicon P-channel MOSFET
Silicon N-channel MOSFET
zFeatures
1) The QS6M4 combines Pch MOSFET with a Nch
MOSFET in a single TSMT6 package.
2) Low on-state resistance with a fast switching.
3) Low voltage drive (2.5V).
zApplications
Load switch, inverter
zDimensions (Unit : mm)
Each lead has same dimensions
TSMT6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
2.8
1.6
1.9
2.9
0.950.95
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
Abbreviated symbol : M04
zPackaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
QS6M4
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
DSS
Symbol
V
GSS
I
D
I
DP
I
S
I
SP
P
D
°CTch
°CTstg
Nchannel
150
−55 to +150
Pchannel
Limits
Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
ContinuousSource current
(Body diode)
Pulsed
∗1
V30
V±12
A±1.5
A±6.0
A0.8
A6.0
W / TOTAL
−20
±12
±1.5
±6.0
−0.75
−6.0
1.25
∗1
∗2
W / ELEMENT
0.9
zEquivalent circuit
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗2
∗1
∗1
(1)
(6) (5) (4)
(2) (3)
zThermal resistance
Rth (ch-a)
100
Parameter
Symbol Limits Unit
Channel to ambient
°C / W / TOTAL
139
°C / W / ELEMENT
∗
∗ Mounted on a ceramic board
QS6M4
Transistors
Rev.B 2/5
zElectrical characteristics (Ta=25°C)
<Tr1. N-ch MOSFET>
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
=±12V / V
DS
=0V
V
DD
15V
30 −−VI
D
=1mA / V
GS
=0V
−−1 µAV
DS
=30V / V
GS
=0V
0.5 − 1.5 V V
DS
=10V / I
D
=1mA
− 170 230 I
D
=1.5A / V
GS
=4.5V
− 180 245 mΩ I
D
=1.5A / V
GS
=4.0V
− 260 360 I
D
=1.0A / V
GS
=2.5V
1.0 −−SV
DS
=10V / I
D
=1.0A
− 80 − pF V
DS
=10V
− 25
15
− pF V
GS
=0V
−
7
− pF f=1MHz
V
GS
=4.5V
R
L
=15Ω / R
G
=10Ω
−
18
− ns
−
15
− ns
−
15
− ns
−
1.6
− ns
−
0.5
− nC
−
0.9
− nC V
GS
=4.5V
R
L
=10Ω
R
G
=10Ω
−−nC I
D
=1.5A
∗
∗
∗
∗
∗
∗
∗
∗
∗
I
D
=1A, V
DD
15V
zBody diode characteristics (Source-Drain)
<Tr1. N-ch MOSFET>
V
SD
−−1.2 V I
S
=3.2A / V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗
Forward voltage
∗Pulsed
QS6M4
Transistors
Rev.B 3/5
zElectrical characteristics (Ta=25°C)
<Tr2. P-ch MOSFET>
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
= ±12V / V
DS
=0V
V
DD
−15V
−20 −−VI
D
= −1mA / V
GS
=0V
−−−1 µAV
DS
= −20V / V
GS
=0V
−0.7 −−2.0 V V
DS
= −10V / I
D
=−1mA
− 155 215 I
D
= −1.5A / V
GS
= −4.5V
− 170 235 mΩ I
D
= −1.5A / V
GS
= −4.0V
− 310 430 I
D
= −0.75A / V
GS
= −2.5V
1.0 −−SV
DS
= −10V / I
D
= −0.75A
− 270 − pF V
DS
= −10V
− 40
35
− pF V
GS
=0V
−
10
− pF f=1MHz
V
GS
= −4.5V
R
L
=20Ω / R
G
=10Ω
−
12
− ns
−
45
− ns
−
20
− ns
−
3.0
− ns
−
0.8
− nC
−
0.85
− nC V
GS
= −4.5V
−−nC I
D
= −1.5A
I
D
= −0.75A, V
DD
−15V
R
L
=10Ω
R
G
=10Ω
zBody diode characteristics (Source-Drain)
<Tr2. P-ch MOSFET>
V
SD
−−−1.2 V I
S
= −0.75A / V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
Forward voltage
P1-P3P4-P6

QS6M4TR

Mfr. #:
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Description:
MOSFET N+P 30 20V 1.5A TSMT6
Lifecycle:
New from this manufacturer.
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