©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW24/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
- 45
- 60
- 80
- 100
V
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 6 A
I
CP
*Collector Current (Pulse) - 8 A
I
B
Base Current - 0.2 A
P
C
Collector Dissipation (T
C
=25°C) 50 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
BDW24/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
• Power Darlington TR
• Complement to BDW23, BDW23A, BDW23B and BDW23C respectively
1.Base 2.Collector 3.Emitter
1
TO-220