BDW24BTU

©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW24/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
- 45
- 60
- 80
- 100
V
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 6 A
I
CP
*Collector Current (Pulse) - 8 A
I
B
Base Current - 0.2 A
P
C
Collector Dissipation (T
C
=25°C) 50 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
BDW24/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
Power Darlington TR
Complement to BDW23, BDW23A, BDW23B and BDW23C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW24/A/B/C
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BDW24
: BDW24A
: BDW24B
: BDW24C
I
C
= - 100mA, I
B
= 0 - 45
- 60
- 80
- 100
V
V
V
V
I
CBO
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
I
CEO
Collector Cut-off Current
: BDW24
: BDW24A
: BDW24B
: BDW24C
V
CE
= - 22V, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 2 mA
h
FE
* DC Current Gain V
CE
= - 3V, I
C
= - 1A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 6A
1000
750
100
20000
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 8mA
I
C
= - 6A, I
B
= - 60mA
- 2
- 3
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 8mA - 2.5 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 3V, I
C
= - 1A
V
CE
= - 3V, I
C
= - 6A
- 2.5
- 3
V
V
V
F
* Parallel Diode Forward Voltage I
F
= - 2A - 1.8 V
©2000 Fairchild Semiconductor International
BDW24/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1000
10000
V
CE
= -3V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
I
C
= 250 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0
-0
-1
-2
-3
-4
-5
-6
-7
-8
V
CE
= -3V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
-0.1
-1
-10
-100
BDW24A
10µs
I
C
(max). Pulsed
BDW24C
BDW24B
BDW24
100µs
1ms
10ms
DC
I
C
(max).
Continuous
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE

BDW24BTU

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 80V 6A TO-220
Lifecycle:
New from this manufacturer.
Delivery:
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