VB20100C
www.vishay.com
Vishay General Semiconductor
Revision: 19-Jun-2018
1
Document Number: 87982
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.50 V at I
F
= 5 A
DESIGN SUPPORT TOOLS
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
100 V
I
FSM
150 A
V
F
at I
F
= 10 A 0.58 V
T
J
max. 150 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Common cathode
1
2
K
TMBS
®
D
2
PAK (TO-263AB)
PIN 1
PIN 2
K
HEATSINK
VB20100C
click logo to get started
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VB20100C UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
150 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
