VN5010AK-E Electrical specifications
Doc ID 13218 Rev 7 7/31
2 Electrical specifications
Figure 3. Current and voltage conventions
Note: V
Fn
= V
OUT
- V
CC
during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
I
S
I
GND
V
CC
V
CC
V
SENSE
OUTPUT
I
OUT
CURRENT SENSE
I
SENSE
INPUT
I
IN
V
IN
V
OUT
GND
CS_DIS
I
CSD
V
CSD
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
-V
CC
Reverse DC supply voltage 0.3 V
- I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current
Internally
limited
A
- I
OUT
Reverse DC output current 30 A
I
IN
DC input current -1 to 10 mA
I
CSD
DC current sense disable input current -1 to 10 mA
-I
CSENSE
DC reverse CS pin current 200 mA
Electrical specifications VN5010AK-E
8/31 Doc ID 13218 Rev 7
2.2 Electrical characteristics
Values specified in this section are for 8 V< V
CC
< 36 V; -40 °C< T
j
< 150 °C, unless
otherwise stated (for each channel).
V
CSENSE
Current sense maximum voltage
V
CC
-41
+V
CC
V
V
E
MAX
Maximum switching energy (single pulse)
(L=1.25mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
=150ºC; I
OUT
= I
limL
(typ.))
609 mJ
V
ESD
Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF)
Input
Current Sense
CS_DIS
–Output
–V
CC
4000
2000
4000
5000
5000
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
Table 5. Thermal data
Symbol Parameter Max value Unit
R
thj-case
Thermal resistance junction case (max) 0.3 °C/W
R
thj-amb
Thermal resistance junction ambient (max) See Figure 29 °C/W
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage
4.5 13 36 V
V
USD
Undervoltage
shutdown
3.5 4.5 V
V
USDhyst
Undervoltage
shutdown hysteresis
0.5 V
R
ON
On-state resistance
I
OUT
= 6A; T
j
= 25°C
I
OUT
= 6A; T
j
= 150°C
I
OUT
=6A; V
CC
=5V;T
j
=25°C
10
20
13
mΩ
mΩ
mΩ
V
clamp
Clamp voltage I
CC
= 20 mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
= 13V; T
j
= 25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
On-state; V
CC
=13V; V
IN
=5V; I
OUT
=0A
2
(1)
1.5
5
(1)
3
µA
mA
VN5010AK-E Electrical specifications
Doc ID 13218 Rev 7 9/31
I
L(off)
Off-state output
current
V
IN
=V
OUT
=0V; V
CC
= 13V; T
j
= 25°C
V
IN
=V
OUT
=0V; V
CC
= 13V; T
j
= 125°C
0
0
0.01 3
5
µA
V
F
Output - V
CC
diode
voltage
-I
OUT
= 10A; T
j
= 150°C 0.7 V
1. PowerMOS leakage included.
Table 7. Switching (V
CC
=13V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
= 2.6Ω (see Figure 8)- 35 -µs
t
d(off)
Turn-off delay time R
L
= 2.6Ω (see Figure 8)- 65 -µs
(dV
OUT
/dt)
on
Turn-on voltage
slope
R
L
= 2.6Ω -
See
Figure 20
-V/µs
(dV
OUT
/dt)
off
Turn-off voltage
slope
R
L
= 2.6Ω -
See
Figure 22
-V/µs
W
ON
Switching energy
losses during t
won
R
L
= 2.6Ω (see Figure 8)- 1.5 -mJ
W
OFF
Switching energy
losses during t
woff
R
L
= 2.6Ω (see Figure 8)- 0.8 -mJ
Table 8. Logic input
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level voltage 0.9 V
I
IL
Low level input current V
IN
= 0.9V 1 µA
V
IH
Input high level voltage 2.1 V
I
IH
High level input current V
IN
= 2.1V 10 µA
V
I(hyst)
Input hysteresis voltage 0.25 V
V
ICL
Input clamp voltage
I
IN
= 1mA
I
IN
= -1mA
5.5
-0.7
7V
V
V
CSDL
CS_DIS low level voltage 0.9 V
I
CSDL
Low level CS_DIS current V
CSD
= 0.9V 1 µA
V
CSDH
CS_DIS high level voltage 2.1 V
I
CSDH
High level CS_DIS current V
CSD
= 2.1V 10 µA
V
CSD(hyst)
CS_DIS hysteresis voltage 0.25 V
V
CSCL
CS_DIS clamp voltage
I
CSD
= 1mA
I
CSD
= -1mA
5.5
-0.7
7V
V
Table 6. Power section (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit

VN5010AK-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Hi side drive
Lifecycle:
New from this manufacturer.
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