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BF493SG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1 Publication Order Number:
BF493S/D
BF493S
High Voltage Transistor
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−350 Vdc
Collector−Base Voltage V
CBO
−350 Vdc
Emitter−Base Voltage V
EBO
−6.0 Vdc
Collector Current − Continuous I
C
−500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above = 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
BF493SG TO−92
(Pb−Free)
5000 Units / Bulk
COLLECTOR
3
2
BASE
1
EMITTER
http://onsemi.com
1
2
3
STRAIGHT LEAD
BULK PACK
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
BF
493S
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BF493S
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−350 − Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−350 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−6.0 − Vdc
Collector Cutoff Current
(V
CE
= −250 Vdc)
I
CES
− −10 nAdc
Emitter Cutoff Current
(V
EB
= −6.0 Vdc, I
C
= 0)
I
EBO
− 0.1
mAdc
Collector Cutoff Current
(V
CB
= −250 Vdc, I
E
= 0, T
A
= 25°C)
(V
CB
= −250 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
−
−
−0.005
−1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
h
FE
25
40
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
CE(sat)
− −2.0 Vdc
Base−Emitter On Voltage
(I
C
= −20 mA, I
B
= −2.0 mA)
V
BE(sat)
− −2.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 20 MHz)
f
T
50 − MHz
Common−Emitter Feedback Capacitance
(V
CB
= −100 Vdc, I
E
= 0, f = 1.0 MHz)
C
re
− 1.6 pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
150
−1.0
15
h
FE
, DC CURRENT GAIN
T
J
= +125°C
+25°C
−55°C
V
CE
= −10 Vdc
20
30
50
70
100
−2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −80 −100
BF493S
http://onsemi.com
3
C, CAPACITANCE (pF)
Figure 2. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
−0.1
100
50
20
1.0
C
cb
10
2.0
5.0
C
ib
Figure 3. Current−Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
−50−20−10−5.0−2.0
100
60
40
30
20
0
T
J
= 25°C
V
CE
= −20 Vdc
f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz
)
T
−1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V, VOLTAGE (VOLTS)
−1.0
0
V
CE(sat)
@ I
C
/I
B
= 10 mA
V
BE
@ V
CE
= −10 V
−0.8
−0.6
−0.4
−0.2
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
MPSA93
Figure 5. Active Region — Safe Operating Area
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION
MPSA92
100 ms
1.0 ms
T
J
= 150°C
1.5 WATT THERMAL
LIMITATION @ T
C
= 25°C
625 mW THERMAL
LIMITATION @ T
A
= 25°C
−500
−5.0
−10
−20
−50
−100
−200
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100−200 −500 −1000
80
−100
−50−20−10−5.0−2.0−1.0
−100
−3.0 −5.0 −10 −20 −30 −50
−100 −200 −300
1.0 s
P1-P3P4-P4

BF493SG

Mfr. #:
Buy BF493SG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 300V PNP
Lifecycle:
New from this manufacturer.
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