Characteristics STTH200W06TV1
2/9 Doc ID 023612 Rev 1
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P (diode 1) X R
th(j-c)
(per diode) + P (diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 1.0 x I
F(AV)
+ 0.003 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward rms current Per diode 145 A
I
F(peak)
Average forward current, = 0.2 Per diode T
c
= 105 °C 200 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 800 A
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature 150 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 0.7
°C/WTo ta l 0 . 4
R
th(c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-30
µA
T
j
= 125 °C - 30 300
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 100 A
1.5
V
T
j
= 150 °C - 1 1.3
T
j
= 25 °C
I
F
= 200 A
-1.75
T
j
= 150 °C - 1.25 1.60
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
